发明授权
US07608912B2 Technique for creating different mechanical strain in different CPU regions by forming an etch stop layer having differently modified intrinsic stress
有权
通过形成具有不同修正的固有应力的蚀刻停止层，在不同的CPU区域中产生不同的机械应变的技术
- 专利标题： Technique for creating different mechanical strain in different CPU regions by forming an etch stop layer having differently modified intrinsic stress
- 专利标题（中）： 通过形成具有不同修正的固有应力的蚀刻停止层，在不同的CPU区域中产生不同的机械应变的技术
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申请号： US11422659申请日： 2006-06-07
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公开(公告)号： US07608912B2公开(公告)日： 2009-10-27
- 发明人: Kai Frohberg , Joerg Hohage , Thomas Werner
- 申请人： Kai Frohberg , Joerg Hohage , Thomas Werner
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102005046974 20050930
- 主分类号： H01L23/58
- IPC分类号： H01L23/58
摘要：
The present invention provides a technique for reducing stress or stress gradients in highly sensitive device regions, such as cache areas, while still providing high transistor performance in logic areas by correspondingly providing contact etch stop layers with compressive and tensile stress for P-channel transistors and N-channel transistors in these logic areas. Consequently, a reduced failure rate may be obtained.
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