发明授权
US07610572B2 Semiconductor integrated circuit device with independent power domains
有权
具有独立电源域的半导体集成电路器件
- 专利标题： Semiconductor integrated circuit device with independent power domains
- 专利标题（中）： 具有独立电源域的半导体集成电路器件
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申请号： US11447168申请日： 2006-06-06
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公开(公告)号： US07610572B2公开(公告)日： 2009-10-27
- 发明人: Yusuke Kanno , Hiroyuki Mizuno , Yoshihiko Yasu , Kenji Hirose , Takahiro Irita
- 申请人： Yusuke Kanno , Hiroyuki Mizuno , Yoshihiko Yasu , Kenji Hirose , Takahiro Irita
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2005-166714 20050607
- 主分类号： G06F17/50
- IPC分类号： G06F17/50 ; H01L25/00
摘要：
A semiconductor integrated circuit device having a control signal system for avoiding failure to check an indefinite signal propagation prevention circuit, for facilitating a check included in an automated tool, and for facilitating a power shutdown control inside a chip. In the semiconductor integrated circuit device, power shutdown priorities are provided by independent power domains (Area A to Area I). A method for preventing a power domain having a lower priority from being turned OFF when a circuit having a high priority is turned ON is also provided.
公开/授权文献
- US20060291110A1 Semiconductor integrated circuit device 公开/授权日：2006-12-28
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