- 专利标题： Defectivity and process control of electroless deposition in microelectronics applications
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申请号： US11243631申请日： 2005-10-05
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公开(公告)号： US07611988B2公开(公告)日： 2009-11-03
- 发明人: Qingyun Chen , Charles Valverde , Vincent Paneccasio , Nicolai Petrov , Daniel Stritch , Christian Witt , Richard Hurtubise
- 申请人： Qingyun Chen , Charles Valverde , Vincent Paneccasio , Nicolai Petrov , Daniel Stritch , Christian Witt , Richard Hurtubise
- 申请人地址： US CT West Haven
- 专利权人： Enthone Inc.
- 当前专利权人： Enthone Inc.
- 当前专利权人地址： US CT West Haven
- 代理机构： Senniger Powers LLP
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.
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