Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistor

Invention Grant

US07612430B2 Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistor 有权

Title translation: 硅双极晶体管，电路布置和制造硅双极晶体管的方法

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Patent Title: Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistor
Patent Title (中): 硅双极晶体管，电路布置和制造硅双极晶体管的方法
Application No.: US10297421

Application Date: 2001-06-15
Publication No.: US07612430B2

Publication Date: 2009-11-03
Inventor: Martin Franosch , Thomas Meister , Herbert Schäfer , Reinhard Stengl , Konrad Wolf
Applicant: Martin Franosch , Thomas Meister , Herbert Schäfer , Reinhard Stengl , Konrad Wolf
Applicant Address: DE
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE
Agency: Altera Law Group, LLC
Priority: DE10029270 20000614
International Application: PCT/DE01/02226 WO 20010615
International Announcement: WO01/97273 WO 20011220
Main IPC: H01L29/732
IPC: H01L29/732

Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistor

Abstract:

The silicon bipolar transistor (100) comprises a base, with a first highly-doped base layer (105) and a second poorly-doped base layer (106) which together form the base. The emitter is completely highly-doped and mounted directly on the second base layer (106).

Abstract(Chinese):

硅双极晶体管（100）包括具有一起形成基极的第一高掺杂基极层（105）和第二较差掺杂的基极层（106）的基极。发射极是完全高度掺杂的，直接安装在第二基极层（106）上。

Public/Granted literature

US20030178700A1 Silicon bipolar transistor, circuit arrangement and method for production of a silicon bipolar transistor Public/Granted day:2003-09-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70	...双极器件
H01L29/72	....晶体管型器件，如连续响应于所施加的控制信号的
H01L29/73	.....双极结型晶体管
H01L29/732	......纵向晶体管