发明授权
- 专利标题: Compensation for distortion in contact lithography
- 专利标题(中): 接触光刻中的失真补偿
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申请号: US11492365申请日: 2006-07-24
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公开(公告)号: US07613538B2公开(公告)日: 2009-11-03
- 发明人: Wei Wu , Duncan Stewart , Shih-Yuan Wang , R. Stanley Williams
- 申请人: Wei Wu , Duncan Stewart , Shih-Yuan Wang , R. Stanley Williams
- 申请人地址: US TX Houston
- 专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人地址: US TX Houston
- 主分类号: G06F19/00
- IPC分类号: G06F19/00 ; G06F7/00 ; G01R23/20 ; H03K4/90 ; G21K5/00 ; G02F1/1335
摘要:
A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold to a substrate during a contact lithography process; and modifying the mold to compensate for the distortions. A contact lithography system includes a design subsystem configured to generate data describing a lithography pattern; an analysis subsystem configured to identify one or more distortions likely to occur when using a mold created from the data; and a mold modification subsystem configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem.
公开/授权文献
- US20080021587A1 Compensation for distortion in contact lithography 公开/授权日:2008-01-24
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