发明授权
- 专利标题： Photoactive resist capping layer
- 专利标题（中）： 光敏抗蚀剂覆盖层
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申请号： US10927885申请日： 2004-08-27
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公开(公告)号： US07615337B2公开(公告)日： 2009-11-10
- 发明人: Robert P. Meagley , Michael McSwiney , Michael D. Goodner , Robert Leet , Manish Chandhok
- 申请人： Robert P. Meagley , Michael McSwiney , Michael D. Goodner , Robert Leet , Manish Chandhok
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Trop, Pruner & Hu, P.C.
- 主分类号： G03F1/00
- IPC分类号： G03F1/00
摘要：
A cap may be formed anisotropically over a photoresist feature. For example, a material, such as a polymer, may be coated over the photoresist feature. If the coated material is photoactive, the cap may be grown preferentially in the vertical direction, creating high aspect ratio structures in some embodiments of the present invention.
公开/授权文献
- US20060046206A1 Photoactive resist capping layer 公开/授权日：2006-03-02
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