发明授权
- 专利标题： Method for manufacturing indium gallium aluminium nitride thin film on silicon substrate
- 专利标题（中）： 在硅衬底上制造铟镓氮化铝薄膜的方法
-
申请号： US12067761申请日： 2006-09-26
-
公开(公告)号： US07615420B2公开(公告)日： 2009-11-10
- 发明人: Fengyi Jiang , Li Wang , Wenqing Fang
- 申请人： Fengyi Jiang , Li Wang , Wenqing Fang
- 申请人地址： CN
- 专利权人： Lattice Power (Jiangxi) Corporation
- 当前专利权人： Lattice Power (Jiangxi) Corporation
- 当前专利权人地址： CN
- 代理机构： Park, Vaughan & Fleming LLP
- 优先权： CN200510030319 20050930
- 国际申请： PCT/CN2006/002583 WO 20060926
- 国际公布： WO2007/036163 WO 20070405
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L21/00 ; H01L21/38 ; H01L21/22
摘要：
The method for manufacturing the indium gallium aluminium nitride (InGaAlN) thin film on silicon substrate, which comprises the following steps: introducing magnesium metal for processing online region mask film, that is, or forming one magnesium mask film layer or metal transition layer; then forming one metal transition layer or magnesium mask layer, finally forming one layer of indium gallium aluminium nitride semiconductor layer; or firstly forming one layer of metal transition layer on silicon substrate and then forming the first indium gallium aluminium nitride semiconductor layer, magnesium mask layer and second indium gallium aluminium nitride semiconductor layer in this order. This invention can reduce the dislocation density of indium gallium aluminium nitride materials and improve crystal quality.
公开/授权文献
信息查询
IPC分类:
