公开(公告)号：US08384100B2

公开(公告)日：2013-02-26

申请号：US11915304

申请日：2006-05-26

申请人： Fengyi Jiang ,  Li Wang ,  Chuanbing Xiong ,  Wenqing Fang ,  Hechu Liu ,  Maoxing Zhou

发明人： Fengyi Jiang ,  Li Wang ,  Chuanbing Xiong ,  Wenqing Fang ,  Hechu Liu ,  Maoxing Zhou

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/32 ,  H01L33/405

摘要： There is provided an InGaAlN light-emitting device and a manufacturing method thereof. The light emitting device includes a conductive substrate having a main surface and a back surface, a metal bonding layer formed on the main surface of the substrate, a light reflecting layer formed on the bonding layer, a semiconductor multilayer structure including at least a p-type and an n-type InGaAlN layer disposed on the reflecting layer, the p-type InGaAlN layer directly contacting the reflecting layer, and ohmic electrodes disposed on said n-type InGaAlN layer and on the back surface of the conductive substrate, respectively.

摘要翻译： 提供了一种InGaAlN发光器件及其制造方法。 发光器件包括具有主表面和背表面的导电衬底，形成在衬底的主表面上的金属粘合层，形成在接合层上的光反射层，至少包括p- 以及设置在反射层上的n型InGaAlN层，与反射层直接接触的p型InGaAlN层和分别设置在所述n型InGaAlN层和导电基板的背面上的欧姆电极。

公开(公告)号：US08053757B2

公开(公告)日：2011-11-08

申请号：US12159850

申请日：2007-08-31

申请人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Chunlan Mo ,  Yong Pu ,  Chuanbing Xiong

发明人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Chunlan Mo ,  Yong Pu ,  Chuanbing Xiong

IPC分类号： H01L29/06

CPC分类号： H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

摘要： One embodiment of the present invention provides a gallium nitride (GaN)-based semiconductor light-emitting device (LED) which includes an n-type GaN-based semiconductor layer (n-type layer); an active layer; and a p-type GaN-based semiconductor layer (p-type layer). The n-type layer is epitaxially grown by using ammonia gas (NH3) as the nitrogen source prior to growing the active layer and the p-type layer. The flow rate ratio between group V and group III elements is gradually reduced from an initial value to a final value. The GaN-based LED exhibits a reverse breakdown voltage equal to or greater than 60 volts.

摘要翻译： 本发明的一个实施例提供了一种包含n型GaN基半导体层（n型层）的基于氮化镓（GaN）的半导体发光器件（LED）。 活性层 和p型GaN类半导体层（p型层）。 在生长活性层和p型层之前，通过使用氨气（NH 3）作为氮源，外延生长n型层。 V组和III组元件之间的流量比从初始值逐渐减小到最终值。 GaN基LED呈现等于或大于60伏的反向击穿电压。

公开(公告)号：US07888779B2

公开(公告)日：2011-02-15

申请号：US11910735

申请日：2006-04-14

申请人： Fengyi Jiang ,  Wenqing Fang ,  Li Wang ,  Chunlan Mo ,  Hechu Liu ,  Maoxing Zhou

发明人： Fengyi Jiang ,  Wenqing Fang ,  Li Wang ,  Chunlan Mo ,  Hechu Liu ,  Maoxing Zhou

IPC分类号： H01L29/06 ,  H01L21/203

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/78 ,  H01L33/0095

摘要： There is provided a method of fabricating InGaAlN film on a silicon substrate, which comprises the following steps of forming a pattern structured having grooves and mesas on the silicon substrate, and depositing InGaAlN film on the surface of substrate, wherein the depth of the grooves is more than 6 nm, and the InGaAlN film formed on the mesas of both sides of the grooves are disconnected in the horizontal direction. The method may grow high quality, no crack and large area of InGaAlN film by simply treating the substrate. At the same time, there is also provided a method of fabricating InGaAlN light-emitting device by using the silicon substrate.

摘要翻译： 提供了一种在硅衬底上制造InGaAlN膜的方法，其包括以下步骤：在硅衬底上形成具有凹槽和台面的图案，并在衬底表面上沉积InGaAlN膜，其中凹槽的深度为 大于6nm，并且形成在槽的两侧的台面上的InGaAlN膜在水平方向上断开。 该方法可以通过简单地处理基板来生长高质量，无裂纹和大面积的InGaAlN膜。 同时，还提供了通过使用硅衬底制造InGaAlN发光器件的方法。

公开(公告)号：US20080210951A1

公开(公告)日：2008-09-04

申请号：US12067690

申请日：2006-11-17

申请人： Fengyi Jiang ,  Bilin Shao ,  Li Wang ,  Wenqing Fang

发明人： Fengyi Jiang ,  Bilin Shao ,  Li Wang ,  Wenqing Fang

IPC分类号： H01L33/00 ,  H01L21/205

CPC分类号： H01L33/0066 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L33/0087 ,  H01L33/12

摘要： One embodiment of the present invention provides a semiconductor light-emitting device which includes: (1) a silicon (Si) substrate; (2) a silver (Ag) transition layer which is formed on a surface of the Si substrate, wherein the Ag transition layer covers the Si substrate surface; and (3) an InGaAlN, ZnMgCdO, or ZnBeCdO-based semiconductor light-emitting structure which is fabricated on the Ag-coated Si substrate. Note that the Ag transition layer prevents the Si substrate surface from forming an amorphous overcoat with reactant gases used for growing the semiconductor light-emitting structure.

摘要翻译： 本发明的一个实施例提供一种半导体发光器件，其包括：（1）硅（Si）衬底; （2）形成在Si衬底的表面上的银（Ag）过渡层，其中Ag过渡层覆盖Si衬底表面; 和（3）在Ag涂覆的Si衬底上制造的InGaAlN，ZnMgCdO或ZnBeCdO基半导体发光结构。 注意，Ag过渡层防止Si衬底表面与用于生长半导体发光结构的反应气体形成无定形外涂层。

公开(公告)号：US08361880B2

公开(公告)日：2013-01-29

申请号：US12063989

申请日：2006-10-26

申请人： Fengyi Jiang ,  Chuanbing Xiong ,  Wenqing Fang ,  Li Wang

发明人： Fengyi Jiang ,  Chuanbing Xiong ,  Wenqing Fang ,  Li Wang

IPC分类号： H01L21/30

CPC分类号： H01L33/0079 ,  H01L33/32 ,  H01L33/40 ,  H01L33/641

摘要： One embodiment of the present invention provides a semiconductor light-emitting device which includes a multi-layer structure. The multilayer structure comprises a first doped layer, an active layer, and a second doped layer. The semiconductor light-emitting device further includes a first Ohmic-contact layer configured to form a conductive path to the first doped layer, a second Ohmic-contact layer configured to form a conductive path to the second doped layer, and a support substrate comprising not less than 15% chromium (Cr) measured in weight percentage.

摘要翻译： 本发明的一个实施例提供一种包括多层结构的半导体发光器件。 多层结构包括第一掺杂层，有源层和第二掺杂层。 所述半导体发光器件还包括配置成形成到所述第一掺杂层的导电路径的第一欧姆接触层，被配置为形成到所述第二掺杂层的导电路径的第二欧姆接触层，以及不包括 小于15％的铬（Cr）以重量百分比测量。

公开(公告)号：US07692205B2

公开(公告)日：2010-04-06

申请号：US12067767

申请日：2006-09-29

申请人： Li Wang ,  Fengyi Jiang ,  Wenqing Fang

发明人： Li Wang ,  Fengyi Jiang ,  Wenqing Fang

IPC分类号： H01L27/15

CPC分类号： H01L33/38 ,  H01L24/05 ,  H01L33/20 ,  H01L33/32 ,  H01L33/62 ,  H01L51/0072 ,  H01L51/0085 ,  H01L51/0088 ,  H01L51/0094 ,  H01L51/5012 ,  H01L2224/04042 ,  H01L2224/05 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/00

摘要： A semiconductor light-emitting device, the device includes a substrate, a semiconductor stacked layer, a lead electrode and a lead, wherein the semiconductor stacked layer at least includes a N-type layer and a P-type layer, at least one of the N-type layer and the P-type layer has an opening, the opening is just beneath the lead; or includes a conductive substrate having a main surface and a back surface, an adhesive metal layer, a reflective/ohmic metal layer, a semiconductor stacked layer, a lead electrode and a lead sequentially deposited on the main surface of the substrate, the reflective/ohmic metal layer has an opening, the opening is just beneath the lead.

摘要翻译： 一种半导体发光器件，该器件包括衬底，半导体堆叠层，引线电极和引线，其中半导体层叠层至少包括N型层和P型层，至少一个 N型层和P型层有开口，开口正好位于引线下方; 或者包括依次沉积在基板的主表面上的具有主表面和背表面的导电基板，粘合金属层，反射/欧姆金属层，半导体堆叠层，引线电极和引线，反射/ 欧姆金属层具有开口，开口正好位于引线下方。

公开(公告)号：US07615420B2

公开(公告)日：2009-11-10

申请号：US12067761

申请日：2006-09-26

申请人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang

发明人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang

IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L21/38 ,  H01L21/22

CPC分类号： H01L21/02642 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： The method for manufacturing the indium gallium aluminium nitride (InGaAlN) thin film on silicon substrate, which comprises the following steps: introducing magnesium metal for processing online region mask film, that is, or forming one magnesium mask film layer or metal transition layer; then forming one metal transition layer or magnesium mask layer, finally forming one layer of indium gallium aluminium nitride semiconductor layer; or firstly forming one layer of metal transition layer on silicon substrate and then forming the first indium gallium aluminium nitride semiconductor layer, magnesium mask layer and second indium gallium aluminium nitride semiconductor layer in this order. This invention can reduce the dislocation density of indium gallium aluminium nitride materials and improve crystal quality.

摘要翻译： 在硅衬底上制造铟镓铝（InGaAlN）薄膜的方法，包括以下步骤：引入用于在线区域掩模膜的加工的镁金属，即形成一个镁掩模膜层或金属过渡层; 然后形成一个金属过渡层或镁掩模层，最后形成一层铟镓铝半导体层; 或者首先在硅衬底上形成一层金属过渡层，然后依次形成第一铟镓铝氮化物半导体层，镁掩模层和第二铟镓铝氮化物半导体层。 本发明可以降低铟镓铝材料的位错密度，提高晶体质量。

公开(公告)号：US20090026473A1

公开(公告)日：2009-01-29

申请号：US11915304

申请日：2006-05-26

申请人： Fengyi Jiang ,  Li Wang ,  Chuanbing Xiong ,  Wenqing Fang ,  Hechu Liu ,  Maoxing Zhou

发明人： Fengyi Jiang ,  Li Wang ,  Chuanbing Xiong ,  Wenqing Fang ,  Hechu Liu ,  Maoxing Zhou

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/32 ,  H01L33/405

摘要： There is provided an InGaAlN light-emitting device and a manufacturing method thereof. The light emitting device includes a conductive substrate having a main surface and a back surface, a metal bonding layer formed on the main surface of the substrate, a light reflecting layer formed on the bonding layer, a semiconductor multilayer structure including at least a p-type and an n-type InGaAlN layer disposed on the reflecting layer, the p-type InGaAlN layer directly contacting the reflecting layer, and ohmic electrodes disposed on said n-type InGaAlN layer and on the back surface of the conductive substrate, respectively.

摘要翻译： 提供了一种InGaAlN发光器件及其制造方法。 发光器件包括具有主表面和背表面的导电衬底，形成在衬底的主表面上的金属粘合层，形成在接合层上的光反射层，至少包括p- 以及设置在反射层上的n型InGaAlN层，与反射层直接接触的p型InGaAlN层和分别设置在所述n型InGaAlN层和导电基板的背面上的欧姆电极。

公开(公告)号：US08431936B2

公开(公告)日：2013-04-30

申请号：US11841116

申请日：2007-08-20

申请人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Chunlan Mo

发明人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Chunlan Mo

IPC分类号： H01L29/26 ,  H01L29/06

CPC分类号： H01L33/007 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/325

摘要： One embodiment of the present invention provides a method for fabricating a group III-V p-type nitride structure. The method comprises growing a first layer of p-type group III-V material with a first acceptor density in a first growing environment. The method further comprises growing a second layer of p-type group III-V material, which is thicker than the first layer and which has a second acceptor density, on top of the first layer in a second growing environment. In addition, the method comprises growing a third layer of p-type group III-V material, which is thinner than the second layer and which has a third acceptor density, on top of the second layer in a third growing environment.

摘要翻译： 本发明的一个实施例提供一种制造III-V族p型氮化物结构的方法。 该方法包括在第一生长环境中生长具有第一受体密度的第一层p型III-V族材料。 该方法还包括在第二生长环境中在第一层的顶部上生长第二层p型III-V族材料，该第二层厚度比第一层厚，并具有第二受体密度。 此外，该方法包括在第三生长环境中，在第二层的顶部上生长比第二层薄且具有第三受体密度的第三层p型III-V族材料。

公开(公告)号：US20110253972A1

公开(公告)日：2011-10-20

申请号：US13059207

申请日：2008-08-19

申请人： Chuanbing Xiong ,  Fengyi Jiang ,  Wenqing Fang ,  Li Wang ,  Guping Wang

发明人： Chuanbing Xiong ,  Fengyi Jiang ,  Wenqing Fang ,  Li Wang ,  Guping Wang

IPC分类号： H01L33/06 ,  H01L33/44

CPC分类号： H01L21/02458 ,  H01L21/02381 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/46

摘要： A method for fabricating a semiconductor light-emitting device based on a strain adjustable multilayer semiconductor film is disclosed. The method includes epitaxially growing a multilayer semiconductor film on a growth substrate, wherein the multilayer semiconductor film comprises a first doped semiconductor layer, a second doped semiconductor layer, and a multi-quantum-wells (MQW) active layer; forming an ohmic-contact metal layer on the first doped semiconductor layer; depositing a metal substrate on top of the ohmic-contact metal layer, wherein the density and/or material composition of the metal substrate is adjustable along the vertical direction, thereby causing the strain in the multilayer semiconductor film to be adjustable; etching off the growth substrate; and forming an ohmic-electrode coupled to the second doped semiconductor layer.

摘要翻译： 公开了一种用于制造基于应变可调多层半导体膜的半导体发光器件的方法。 该方法包括在生长衬底上外延生长多层半导体膜，其中多层半导体膜包括第一掺杂半导体层，第二掺杂半导体层和多量子阱（MQW）有源层; 在所述第一掺杂半导体层上形成欧姆接触金属层; 在欧姆接触金属层的顶部上沉积金属衬底，其中金属衬底的密度和/或材料组成可沿着垂直方向调节，从而使多层半导体膜中的应变可调; 蚀刻生长衬底; 以及形成耦合到所述第二掺杂半导体层的欧姆电极。