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发明授权
US07615458B2 Activation of CMOS source/drain extensions by ultra-high temperature anneals 有权
通过超高温退火激活CMOS源极/漏极延伸

Activation of CMOS source/drain extensions by ultra-high temperature anneals
摘要：
A method of manufacturing a semiconductor device that includes forming a gate dielectric layer over a semiconductor substrate. A gate electrode is formed over the gate dielectric layer. A dopant is implanted into an extension region of the substrate, with an amount of the dopant remaining in a dielectric layer adjacent the gate electrode. The substrate is annealed at a temperature of about 1000° C. or greater to cause at least a portion of the amount of the dopant to diffuse into the semiconductor substrate.
摘要（中）：

一种制造半导体器件的方法，包括在半导体衬底上形成栅极电介质层。 在栅极电介质层上形成栅电极。 将掺杂剂注入到衬底的延伸区域中，其中掺杂剂的量保留在与栅电极相邻的电介质层中。 衬底在约1000℃或更高的温度下进行退火，以使掺杂剂的量的至少一部分扩散到半导体衬底中。

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