发明授权
- 专利标题： High voltage silicon carbide devices having bi-directional blocking capabilities
- 专利标题（中）： 具有双向阻挡能力的高电压碳化硅器件
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申请号： US11159972申请日： 2005-06-23
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公开(公告)号： US07615801B2公开(公告)日： 2009-11-10
- 发明人: Sei-Hyung Ryu , Jason R. Jenny , Mrinal K. Das , Anant K. Agarwal , John W. Palmour , Hudson McDonald Hobgood
- 申请人： Sei-Hyung Ryu , Jason R. Jenny , Mrinal K. Das , Anant K. Agarwal , John W. Palmour , Hudson McDonald Hobgood
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 代理机构： Myers Bigel Sibley & Sajovec
- 主分类号： H01L29/747
- IPC分类号： H01L29/747
摘要：
High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer, has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface of the voltage blocking SiC substrate. A third region of SiC is provided on the second SiC layer and has the second conductivity type. A fourth region of SiC is provided in the second SiC layer, has the first conductivity type and is adjacent to the third region of SiC. First and second contacts are provided on the first and third regions of SiC, respectively. Related methods of fabricating high voltage SiC devices are also provided.
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