发明授权
- 专利标题: Method of manufacturing image sensor
- 专利标题(中): 图像传感器的制造方法
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申请号: US11850291申请日: 2007-09-05
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公开(公告)号: US07618834B2公开(公告)日: 2009-11-17
- 发明人: Sun-Kyung Bang
- 申请人: Sun-Kyung Bang
- 申请人地址: KR Seoul
- 专利权人: Dongbu HiTek Co., Ltd.
- 当前专利权人: Dongbu HiTek Co., Ltd.
- 当前专利权人地址: KR Seoul
- 代理机构: Sherr & Vaughn, PLLC
- 优先权: KR10-2006-0087752 20060912
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Embodiments relate to a method of manufacturing an image sensor which includes forming a plurality of lower layers over a semiconductor substrate. A first passivation layer may be formed over the lower layers to protect the lower layers. The first passivation layer may be formed in a pixel region and a peripheral region with different thicknesses. A spin-on-glass (SOG) layer may be formed over the first passivation layer. A second passivation layer may be formed over the SOG layer. Array etching may be used to form a concave area in the semiconductor substrate. A plurality of micro lenses may be formed over the bottom surface of the concave area.
公开/授权文献
- US20080061391A1 METHOD OF MANUFACTURING IMAGE SENSOR 公开/授权日:2008-03-13
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