发明授权
US07618876B2 Semiconductor device and method of manufacturing the same by filling a trench which includes an additional coating step
失效
半导体器件及其制造方法，其通过填充包括另外的涂覆步骤的沟槽
- 专利标题： Semiconductor device and method of manufacturing the same by filling a trench which includes an additional coating step
- 专利标题（中）： 半导体器件及其制造方法，其通过填充包括另外的涂覆步骤的沟槽
-
申请号： US11227252申请日： 2005-09-16
-
公开(公告)号： US07618876B2公开(公告)日： 2009-11-17
- 发明人: Osamu Arisumi , Masahiro Kiyotoshi , Katsuhiko Hieda , Yoshitaka Tsunashima
- 申请人： Osamu Arisumi , Masahiro Kiyotoshi , Katsuhiko Hieda , Yoshitaka Tsunashima
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2005-155806 20050527
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/44
摘要：
A method of manufacturing a semiconductor device comprises forming a trench in a semiconductor substrate, forming a first insulating film having a first recessed portion in the trench, forming a coating film so as to fill the first recessed portion therewith, transforming the coating film into a second insulating film, planarizing the second insulating film to expose the first insulating film and the second insulating film, removing at least the second insulating film from the first recessed portion to moderate an aspect ratio for the first recessed portion formed in the trench, thereby forming a second recessed portion therein, and forming a third insulating film on a surface of the semiconductor substrate so as to fill the second recessed portion therewith.
公开/授权文献
- US20060270170A1 Semiconductor device and method of manufacturing same 公开/授权日：2006-11-30
信息查询
IPC分类:
