发明授权
- 专利标题： Method for forming underlying insulation film
- 专利标题（中）： 形成底层绝缘膜的方法
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申请号： US10509371申请日： 2003-03-31
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公开(公告)号： US07622402B2公开(公告)日： 2009-11-24
- 发明人: Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
- 申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Crowell & Moring LLP
- 优先权： JP2002-097845 20020329
- 国际申请： PCT/JP03/04125 WO 20030331
- 国际公布： WO03/088341 WO 20031023
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.
公开/授权文献
- US20050255711A1 Method for forming underlying insulation film 公开/授权日：2005-11-17