Invention Grant
- Patent Title: Pressure sensors and methods of making the same
- Patent Title (中): 压力传感器及其制作方法
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Application No.: US11210309Application Date: 2005-08-24
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Publication No.: US07622782B2Publication Date: 2009-11-24
- Inventor: Stanley Chu , Sisira Kankanam Gamage , Hyon-Jin Kwon
- Applicant: Stanley Chu , Sisira Kankanam Gamage , Hyon-Jin Kwon
- Applicant Address: US NY Schenectady
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Schenectady
- Agency: Cantor Colburn LLP
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
A pressure sensor includes a base substrate silicon fusion bonded to a cap substrate with a chamber disposed between the base substrate and the cap substrate. Each of the base substrate and the cap substrate include silicon. The base substrate includes walls defining a cavity and a diaphragm portion positioned over the cavity, wherein the cavity is open to an environment to be sensed. The chamber is hermetically sealed from the environment.
Public/Granted literature
- US20070052046A1 Pressure sensors and methods of making the same Public/Granted day:2007-03-08
Information query
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