发明授权
- 专利标题： Wafer processing method
- 专利标题（中）： 晶圆加工方法
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申请号： US11471532申请日： 2006-06-21
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公开(公告)号： US07625810B2公开(公告)日： 2009-12-01
- 发明人: Keiichi Kajiyama , Koichi Kondo , Yasuomi Kaneuchi
- 申请人： Keiichi Kajiyama , Koichi Kondo , Yasuomi Kaneuchi
- 申请人地址： JP Tokyo
- 专利权人： Disco Corporation
- 当前专利权人： Disco Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Smith, Gambrell & Russell, LLP
- 优先权： JP2005-185974 20050627
- 主分类号： H01L21/46
- IPC分类号： H01L21/46
摘要：
A method of processing a wafer having a device area where a plurality of devices are formed on the front surface and an extra area surrounding the device area and comprising electrodes which are formed in the device area, comprising: a reinforcement forming step for removing an area, which corresponds to the device area, in the back surface of the wafer to reduce the thickness of the device area to a predetermined value and keeping an area, which corresponds to the extra area, in the back surface of the wafer to form an annular reinforcement; and a via-hole forming step for forming a via-hole in the electrodes of the wafer which has been subjected to the reinforcement forming step.
公开/授权文献
- US20060292826A1 Wafer processing method 公开/授权日：2006-12-28
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