Invention Grant
- Patent Title: Silicon nano wires, semiconductor device including the same, and method of manufacturing the silicon nano wires
- Patent Title (中): 硅纳米线,包括其的半导体器件以及硅纳米线的制造方法
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Application No.: US11362897Application Date: 2006-02-27
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Publication No.: US07625812B2Publication Date: 2009-12-01
- Inventor: Byoung-lyong Choi , Wan-jun Park , Eun-kyung Lee , Jao-woong Hyun
- Applicant: Byoung-lyong Choi , Wan-jun Park , Eun-kyung Lee , Jao-woong Hyun
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2005-0016184 20050225; KR10-2006-0009821 20060201
- Main IPC: H01L21/38
- IPC: H01L21/38

Abstract:
A method of manufacturing silicon nano wires including forming microgrooves on a surface of a silicon substrate, forming a first doping layer doped with a first dopant on the silicon substrate and forming a second doping layer doped with a second dopant between the first doping layer and a surface of the silicon substrate, forming a metal layer on the silicon substrate, forming catalysts by heating the metal layer within the microgrooves of the silicon substrate and growing the nano wires between the catalysts and the silicon substrate using a thermal process.
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