发明授权
- 专利标题: Impurity introducing apparatus and impurity introducing method
- 专利标题(中): 杂质引入装置和杂质引入方法
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申请号: US12057117申请日: 2008-03-27
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公开(公告)号: US07626184B2公开(公告)日: 2009-12-01
- 发明人: Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
- 申请人: Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
- 申请人地址: JP Osaka
- 专利权人: Panasonic Corporation
- 当前专利权人: Panasonic Corporation
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 主分类号: H01L29/04
- IPC分类号: H01L29/04 ; G21K5/10
摘要:
It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.
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