Invention Grant
- Patent Title: Atomic layer deposition using electron bombardment
- Patent Title (中): 使用电子轰击的原子层沉积
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Application No.: US11704660Application Date: 2007-02-09
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Publication No.: US07628855B2Publication Date: 2009-12-08
- Inventor: Neal R. Rueger
- Applicant: Neal R. Rueger
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Mueting, Raasch & Gebhardt, P.A.
- Main IPC: C30B21/02
- IPC: C30B21/02
Abstract:
Formation of a layer of material on a surface by atomic layer deposition methods and systems includes using electron bombardment of the chemisorbed precursor.
Public/Granted literature
- US20070134816A1 Atomic layer deposition using electron bombardment Public/Granted day:2007-06-14
Information query
