公开(公告)号：US08729787B2

公开(公告)日：2014-05-20

申请号：US11640701

申请日：2006-12-18

Applicant: Neal R. Rueger

Inventor： Neal R. Rueger

IPC: H01J21/00

CPC classification number: H01J9/18 ,  B82Y15/00 ,  B82Y99/00 ,  H01J9/025 ,  H01J21/04 ,  H01J21/10 ,  H01J63/02 ,  H01J2201/30469 ,  Y10S977/939

Abstract: The present disclosure includes field emission device embodiments. The present disclosure also includes method embodiments for forming field emitting devices. One device embodiment includes a housing defining an interior space including a lower portion and an upper portion, a cathode positioned in the lower portion of the housing, a elongate nanostructure coupled to the cathode, an anode positioned in the upper portion of the housing, and a control grid positioned between the elongate nanostructure and the anode to control electron flow between the anode and the elongate nanostructure.

Abstract translation: 本公开包括场发射装置实施例。 本公开还包括用于形成场发射器件的方法实施例。 一个装置实施例包括限定内部空间的壳体，该内部空间包括下部分和上部部分，位于壳体下部的阴极，耦合到阴极的细长纳米结构，位于壳体上部的阳极，以及 位于细长纳米结构和阳极之间的控制网格，以控制阳极和细长纳米结构之间的电子流。

公开(公告)号：US08173550B2

公开(公告)日：2012-05-08

申请号：US13179851

申请日：2011-07-11

Applicant: Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

Inventor： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

IPC: H01L21/302

CPC classification number: H01L21/3088 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/76802 ,  H01L27/1052

Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed around a plurality of mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

Abstract translation: 使用多个间距倍数的间隔物来形成具有特别小的临界尺寸的特征的掩模图案。 去除围绕多个心轴形成的每对间隔件中的一个，并且由两个相互选择性可蚀刻的材料形成的交替层围绕剩余的间隔物沉积。 然后蚀刻由一种材料形成的层，留下由形成掩模图案的另一种材料形成的垂直延伸层。 或者，代替沉积交替的层，非晶碳沉积在剩余的间隔物周围，随后在无定形碳上形成成对隔离物的多个循环，去除一对隔离物之一并沉积无定形碳层。 可以重复循环以形成所需的图案。 由于图案中的某些特征的临界尺寸可以通过控制间隔物之间​​的间隔的宽度来设定，所以可以形成特别小的掩模特征。

公开(公告)号：US20120048831A1

公开(公告)日：2012-03-01

申请号：US12862359

申请日：2010-08-24

Applicant: Neal R. Rueger

Inventor： Neal R. Rueger

IPC: C23F1/00

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32532 ,  H01L21/67069

Abstract: Apparatuses and methods for processing substrates are disclosed. A processing apparatus includes a chamber for generating a plasma therein, an electrode associated with the chamber, and a signal generator coupled to the electrode. The signal generator applies a DC pulse to the electrode with sufficient amplitude and sufficient duty cycle of an on-time and an off-time to cause events within the chamber. A plasma is generated from a gas in the chamber responsive to the amplitude of the DC pulse. Energetic ions are generated by accelerating ions of the plasma toward a substrate in the chamber in response to the amplitude of the DC pulse during the on-time. Some of the energetic ions are neutralized to energetic neutrals in response to the DC pulse during the off-time. Some of the energetic neutrals impact the substrate with sufficient energy to cause a chemical reaction on the substrate.

Abstract translation: 公开了用于处理衬底的设备和方法。 处理装置包括用于在其中产生等离子体的腔室，与腔室相关联的电极以及耦合到电极的信号发生器。 信号发生器以足够的幅度和足够的导通时间和关断时间的占空比向电极施加DC脉冲以引起腔室内的事件。 根据DC脉冲的振幅，从室内的气体产生等离子体。 通过响应于导通时间期间的DC脉冲的幅度，将等离子体的离子加速到腔室中的衬底来产生能量离子。 一些能量离子在关闭时间期间响应于DC脉冲被中和到能量中性粒子。 一些精力充沛的中性粒子以足够的能量冲击衬底，从而在衬底上引起化学反应。

公开(公告)号：US08033884B2

公开(公告)日：2011-10-11

申请号：US12633674

申请日：2009-12-08

Applicant: Neal R. Rueger ,  Stephen J. Kramer

Inventor： Neal R. Rueger ,  Stephen J. Kramer

IPC: H01J9/00

CPC classification number: H01J9/02 ,  H01J11/10 ,  H01J37/32596 ,  H05H1/2406 ,  H05H1/46 ,  H05H2001/466

Abstract: Some embodiments include methods of forming plasma-generating microstructures. Aluminum may be anodized to form an aluminum oxide body having a plurality of openings extending therethrough. Conductive liners may be formed within the openings, and circuitry may be formed to control current flow through the conductive liners. The conductive liners form a plurality of hollow cathodes, and the current flow is configured to generate and maintain plasmas within the hollow cathodes. The plasmas within various hollow cathodes, or sets of hollow cathodes, may be independently controlled. Such independently controlled plasmas may be utilized to create a pattern in a display, or on a substrate. In some embodiments, the plasmas may be utilized for plasma-assisted etching and/or plasma-assisted deposition. Some embodiments include constructions and assemblies containing multiple plasma-generating structures.

Abstract translation: 一些实施例包括形成等离子体产生微结构的方法。 铝可以被阳极化以形成具有延伸穿过其中的多个开口的氧化铝体。 可以在开口内形成导电衬里，并且可以形成电路以控制通过导电衬套的电流。 导电衬里形成多个中空阴极，并且电流流动被配置为在中空阴极内产生和维持等离子体。 各种空心阴极内的等离子体或一组空心阴极可以独立控制。 这种独立控制的等离子体可用于在显示器或基板上产生图案。 在一些实施例中，等离子体可用于等离子体辅助蚀刻和/或等离子体辅助沉积。 一些实施例包括包含多个等离子体产生结构的构造和组件。

公开(公告)号：US08003542B2

公开(公告)日：2011-08-23

申请号：US12489337

申请日：2009-06-22

Applicant: Sanket Sant ,  Gurtej S. Sandhu ,  Neal R. Rueger

Inventor： Sanket Sant ,  Gurtej S. Sandhu ,  Neal R. Rueger

IPC: H01L21/302

CPC classification number: H01L21/3088 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/76802 ,  H01L27/1052

Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed around a plurality of mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

Abstract translation: 使用多个间距倍数的间隔物来形成具有特别小的临界尺寸的特征的掩模图案。 去除围绕多个心轴形成的每对间隔件中的一个，并且由两个相互选择性可蚀刻的材料形成的交替层围绕剩余的间隔物沉积。 然后蚀刻由一种材料形成的层，留下由形成掩模图案的另一种材料形成的垂直延伸层。 或者，代替沉积交替层，无定形碳沉积在剩余的间隔物周围，随后在无定形碳上形成一对间隔物的多个循环，去除一对隔离物中的一个并沉积无定形碳层。 可以重复循环以形成所需的图案。 由于图案中的某些特征的临界尺寸可以通过控制间隔物之间​​的间隔的宽度来设定，所以可以形成特别小的掩模特征。

公开(公告)号：US07628855B2

公开(公告)日：2009-12-08

申请号：US11704660

申请日：2007-02-09

Applicant: Neal R. Rueger

Inventor： Neal R. Rueger

IPC: C30B21/02

CPC classification number: C30B25/14 ,  C23C16/45529 ,  C23C16/45536 ,  C23C16/487

Abstract: Formation of a layer of material on a surface by atomic layer deposition methods and systems includes using electron bombardment of the chemisorbed precursor.

Abstract translation: 通过原子层沉积方法和系统在表面上形成材料层包括使用电化学吸附前体的电子轰击。

公开(公告)号：US20090258492A1

公开(公告)日：2009-10-15

申请号：US12489337

申请日：2009-06-22

Applicant: Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

Inventor： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

IPC: H01L21/306

CPC classification number: H01L21/3088 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/76802 ,  H01L27/1052

Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed around a plurality of mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

Abstract translation: 使用多个间距倍数的间隔物来形成具有特别小的临界尺寸的特征的掩模图案。 去除围绕多个心轴形成的每对间隔件中的一个，并且由两个相互选择性可蚀刻的材料形成的交替层围绕剩余的间隔物沉积。 然后蚀刻由一种材料形成的层，留下由形成掩模图案的另一种材料形成的垂直延伸层。 或者，代替沉积交替的层，非晶碳沉积在剩余的间隔物周围，随后在无定形碳上形成成对隔离物的多个循环，去除一对隔离物之一并沉积无定形碳层。 可以重复循环以形成所需的图案。 由于图案中的某些特征的临界尺寸可以通过控制间隔物之间​​的间隔的宽度来设定，所以可以形成特别小的掩模特征。

公开(公告)号：US07344948B2

公开(公告)日：2008-03-18

申请号：US10050347

申请日：2002-01-15

Applicant: Gurtej S. Sandhu ,  John T. Moore ,  Neal R. Rueger

Inventor： Gurtej S. Sandhu ,  John T. Moore ,  Neal R. Rueger

IPC: H01L21/4763

CPC classification number: H01L21/02332 ,  H01L21/0234 ,  H01L21/265 ,  H01L21/28061 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

Abstract: The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer. The nitrogen is subsequently thermally annealed within the layer to bond at least some of the nitrogen to silicon within the layer. The invention also encompasses a method of forming a transistor. A gate oxide layer is formed over a semiconductive substrate. The gate oxide layer comprises silicon dioxide. The gate oxide layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer, and the layer is maintained at less than or equal to 400° C. during the exposing. Subsequently, the nitrogen within the layer is thermally annealed to bond at least a majority of the nitrogen to silicon. At least one conductive layer is formed over the gate oxide layer. Source/drain regions are formed within the semiconductive substrate, and are gatedly connected to one another by the at least one conductive layer. The invention also encompasses transistor structures.

Abstract translation: 本发明包括将氮掺入含氧化硅的层中的方法。 将含氧化硅的层暴露于含氮等离子体中以将氮引入层中。 氮气随后在层内热退火以将至少一些氮与硅结合在层内。 本发明还包括形成晶体管的方法。 在半导体衬底上形成栅氧化层。 栅氧化层包括二氧化硅。 将栅极氧化层暴露于含氮等离子体中以将氮引入层中，并且在暴露期间该层保持在小于或等于400℃。 随后，层内的氮被热退火以将至少大部分氮与硅结合。 在栅极氧化物层上形成至少一个导电层。 源极/漏极区域形成在半导体衬底内，并且通过至少一个导电层彼此门控连接。 本发明还包括晶体管结构。

公开(公告)号：US20080038933A1

公开(公告)日：2008-02-14

申请号：US11503762

申请日：2006-08-14

Applicant: Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

Inventor： Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

IPC: H01L21/31

CPC classification number: H01L21/31116 ,  C23C16/0245 ,  C23C16/042 ,  C23C16/26 ,  C23C16/517 ,  H01J37/28 ,  H01J37/3178 ,  H01J37/3233 ,  H01J2237/2605 ,  H01J2237/3137 ,  H01J2237/3151 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01L27/1052 ,  Y10S438/905 ,  Y10S438/909

Abstract: Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.

Abstract translation: 示出了在半导体工艺中选择性蚀刻的方法和装置。 在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。 电子束为选择性化学物质提供活化。 在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。 在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。

公开(公告)号：US06589611B1

公开(公告)日：2003-07-08

申请号：US10226849

申请日：2002-08-22

Applicant: Weimin Li ,  Neal R. Rueger

Inventor： Weimin Li ,  Neal R. Rueger

IPC: H05H124

CPC classification number: H01J37/32091 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/321 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3185

Abstract: The invention encompasses a method for sequentially processing separate sets of wafers within a chamber. Each set is subjected to plasma-enhanced deposition of material within the chamber utilizing a plasma that is primarily inductively coupled. After the plasma-enhanced deposition, and while the set remains within the chamber, the plasma is changed to a primarily capacitively coupled plasma. The cycling of the plasma from primarily inductively coupled to primarily capacitively coupled can increase the ratio of processed wafers to plasma reaction chamber internal sidewall cleanings that can be obtained while maintaining low particle counts on the processed wafers.

Abstract translation: 本发明包括用于在腔室内顺序处理单独的晶片组的方法。 使用主要感应耦合的等离子体，使每组在室内进行等离子体增强的材料沉积。 在等离子体增强沉积之后，并且当集合保持在室内时，等离子体被改变为主要的电容耦合等离子体。 等离子体从主要电感耦合到主要电容耦合的循环可以增加处理的晶片与等离子体反应室内部侧壁清洁的比例，其可以在保持处理的晶片上的低颗粒计数的同时获得。