Invention Grant
- Patent Title: Method for reducing microloading in etching high aspect ratio structures
- Patent Title (中): 蚀刻高纵横比结构中减少微载荷的方法
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Application No.: US11757950Application Date: 2007-06-04
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Publication No.: US07629255B2Publication Date: 2009-12-08
- Inventor: Qian Fu , Shenjian Liu , Wonchul Lee , Bryan Pu
- Applicant: Qian Fu , Shenjian Liu , Wonchul Lee , Bryan Pu
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method for etching features of different aspect ratios in a conductive layer is provided. The method comprises: depositing over the conductive layer with an aspect ratio dependent deposition; etching features into the conductive layer with an aspect ratio dependent etching of the conductive layer; and repeating the depositing and the etching at least once.
Public/Granted literature
- US20080296736A1 METHOD FOR REDUCING MICROLOADING IN ETCHING HIGH ASPECT RATIO STRUCTURES Public/Granted day:2008-12-04
Information query
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