发明授权
US07629653B1 Techniques for improving negative bias temperature instability (NBTI) lifetime of field effect transistors
有权
改善场效应晶体管负偏压温度不稳定性（NBTI）寿命的技术
- 专利标题： Techniques for improving negative bias temperature instability (NBTI) lifetime of field effect transistors
- 专利标题（中）： 改善场效应晶体管负偏压温度不稳定性（NBTI）寿命的技术
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申请号： US11827765申请日： 2007-07-13
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公开(公告)号： US07629653B1公开(公告)日： 2009-12-08
- 发明人: Sharmin Sadoughi , Krishnaswamy Ramkumar , Ravindra Kapre , Igor Polishchuk , Maroun Khoury
- 申请人： Sharmin Sadoughi , Krishnaswamy Ramkumar , Ravindra Kapre , Igor Polishchuk , Maroun Khoury
- 申请人地址： US CA San Jose
- 专利权人： Cypress Semiconductor Corporation
- 当前专利权人： Cypress Semiconductor Corporation
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
In one embodiment, an integrated circuit includes a PMOS transistor having a gate stack comprising a P+ doped gate polysilicon layer and a nitrided gate oxide (NGOX) layer. The NGOX layer may be over a silicon substrate. The integrated circuit further includes an interconnect line formed over the transistor. The interconnect line includes a hydrogen getter material and may comprise a single material or stack of materials. The interconnect line advantageously getters hydrogen (e.g., H2 or H2O) that would otherwise be trapped in the NGOX layer/silicon substrate interface, thereby improving the negative bias temperature instability (NBTI) lifetime of the transistor.
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