发明授权
- 专利标题: Composite semiconductor device
- 专利标题(中): 复合半导体器件
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申请号: US12078323申请日: 2008-03-28
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公开(公告)号: US07629668B2公开(公告)日: 2009-12-08
- 发明人: Jun Yabuzaki , Takeshi Yokoyama , Tomonori Seki
- 申请人: Jun Yabuzaki , Takeshi Yokoyama , Tomonori Seki
- 申请人地址: JP Tokyo
- 专利权人: Fuji Electric Technology Co., Ltd.
- 当前专利权人: Fuji Electric Technology Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Rabin & Berdo, PC
- 优先权: JP2007-092310 20070330
- 主分类号: H01L29/00
- IPC分类号: H01L29/00
摘要:
The electrode of a thin-type capacitor is connected to the rear surface of a p-type semiconductor substrate which is brought to a ground potential, by a conductive DAF (Die Attach Film) or by a conductive adhesive, and the electrodes of the front surface of the p-type semiconductor substrate are respectively connected with and stacked on the terminals of a thin-type inductor by bumps, whereby manufacturing costs can be reduced while the occurrence of noise can be suppressed and packaging area can be made small.
公开/授权文献
- US20080237790A1 Composite semiconductor device 公开/授权日:2008-10-02
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