发明授权
US07631287B2 Calculating method, verification method, verification program and verification system for edge deviation quantity, and semiconductor device manufacturing method 失效
边缘偏移量的计算方法,验证方法,验证程序和验证系统以及半导体器件制造方法

Calculating method, verification method, verification program and verification system for edge deviation quantity, and semiconductor device manufacturing method
摘要:
A method in which a desired pattern is compared with a finish pattern to be formed on a wafer, which is predicted from a design pattern, based on a calculation of a light beam intensity, and a deviation quantity of the finish pattern from the desired pattern at each edge of the finish pattern and the desired pattern is calculated, comprising setting a reference light beam intensity for setting the desired pattern on a wafer, setting an evaluation point for comparison of the finish pattern with the desired pattern, calculating a light beam intensity at the evaluation point, calculating a differentiation value of the light beam intensity at the evaluation point, calculating an intersection of the differentiation value with the reference light beam intensity, and calculating a difference between the intersection and the evaluation point, the difference defining an edge deviation quantity of the finish pattern from the desired pattern.
信息查询
0/0