发明授权
US07632758B2 Process and apparatus for forming oxide film, and electronic device material
失效
用于形成氧化膜的方法和设备以及电子器件材料
- 专利标题： Process and apparatus for forming oxide film, and electronic device material
- 专利标题（中）： 用于形成氧化膜的方法和设备以及电子器件材料
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申请号： US11508871申请日： 2006-08-24
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公开(公告)号： US07632758B2公开(公告)日： 2009-12-15
- 发明人: Junichi Kitagawa , Shinji Ide , Shigenori Ozaki
- 申请人： Junichi Kitagawa , Shinji Ide , Shigenori Ozaki
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2003-146228 20030523
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
An oxide film-forming apparatus, comprising: a process chamber for disposing an electronic device substrate at a predetermined position; water vapor supply means for supplying water vapor into the process chamber; and plasma exciting means for activating the water vapor with plasma, whereby the surface of the electronic device substrate can be irradiated with the plasma based on the water vapor.
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