Invention Grant
- Patent Title: SPST switch, SPDT switch and MPMT switch
- Patent Title (中): SPST开关，SPDT开关和MPMT开关
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Application No.: US10586748Application Date: 2004-03-24
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Publication No.: US07633357B2Publication Date: 2009-12-15
- Inventor: Masatake Hangai , Morishige Hieda , Moriyasu Miyazaki
- Applicant: Masatake Hangai , Morishige Hieda , Moriyasu Miyazaki
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- International Application: PCT/JP2004/004015 WO 20040324
- International Announcement: WO2005/093894 WO 20051006
- Main IPC: H01P1/10
- IPC: H01P1/10 ; H03K17/687
Abstract:
A single pole single throw switch for controlling propagation of a high frequency signal between an input terminal (11a) and an output terminal (11b). First FET switches (14a, 14b) in which drains and sources of FETs (12a, 12b) are connected in parallel with inductors (13a, 13b) are connected in parallel. Each FET (12a, 12b) is switched between on state and off state by a voltage being applied to the gate thereof. At the frequency of the high frequency signal, each inductor (13a, 13b) connected with off capacitor of each FET (12a, 12b) resonates in parallel.
Public/Granted literature
- US20080238570A1 Spst Switch, Spdt Switch and Mpmt Switch Public/Granted day:2008-10-02
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