发明授权
- 专利标题: Storage element and memory
- 专利标题(中): 存储元件和存储器
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申请号: US12013895申请日: 2008-01-14
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公开(公告)号: US07633796B2公开(公告)日: 2009-12-15
- 发明人: Kazutaka Yamane , Minoru Ikarashi , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Yutaka Higo , Yuki Oishi , Hiroshi Kano
- 申请人: Kazutaka Yamane , Minoru Ikarashi , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Yutaka Higo , Yuki Oishi , Hiroshi Kano
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: K&L Gates LLP
- 优先权: JP2007-010549 20070119
- 主分类号: G11C11/14
- IPC分类号: G11C11/14
摘要:
A storage element includes a storage layer for holding information depending on a magnetization state of a magnetic material; and a magnetization fixed layer in which magnetization direction is fixed, that is arranged relative to the storage layer through a nonmagnetic layer. The magnetization direction of the storage layer is changed with application of an electric current in a laminating direction to enable information to be recorded to the storage layer. A plurality of magnetization regions respectively having magnetization components in laminating directions and having magnetizations in different directions from each other are formed in the magnetization fixed layer or on an opposite side of the magnetization fixed layer relative to the storage layer.
公开/授权文献
- US20080180992A1 STORAGE ELEMENT AND MEMORY 公开/授权日:2008-07-31
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