Mask with hydrophobic surface

Invention Grant

US07635652B2 Mask with hydrophobic surface 有权

Title translation: 面具疏水表面

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Patent Title: Mask with hydrophobic surface
Patent Title (中): 面具疏水表面
Application No.: US11717127

Application Date: 2007-03-13
Publication No.: US07635652B2

Publication Date: 2009-12-22
Inventor: Chih-Wing Chang
Applicant: Chih-Wing Chang
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Co. Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Co. Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Birch, Stewart, Kolasch & Birch, LLP
Main IPC: H01L21/31
IPC: H01L21/31

Abstract:

A mask with hydrophobic surface. The mask includes a substrate, a plurality of patterns formed on the substrate, and a self-assembled monolayer (SAM) formed on the substrate exposed by the patterns. The self-assembled monolayer includes an alkyltrichlorosilane-based layer such as octadecyltrichlorosilane (OTS) or perfluorodecyltrichlorosilane (FDTS) and formed by vapor process or solution process.

Abstract(Chinese):

具有疏水表面的面具。掩模包括基板，形成在基板上的多个图案，以及在由图案曝光的基板上形成的自组装单层（SAM）。自组装单层包括烷基三氯硅烷基层，如十八烷基三氯硅烷（OTS）或全氟癸基三氯硅烷（FDTS），并通过蒸气法或溶液法形成。

Public/Granted literature

US20080233488A1 Mask with hydrophobic surface Public/Granted day:2008-09-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择