发明授权
- 专利标题: Magnetic tunnel junction (MTJ) based magnetic field angle sensor
- 专利标题(中): 磁隧道结(MTJ)磁场角传感器
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申请号: US11799706申请日: 2007-05-02
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公开(公告)号: US07635974B2公开(公告)日: 2009-12-22
- 发明人: Yimin Guo , Po-Kang Wang
- 申请人: Yimin Guo , Po-Kang Wang
- 申请人地址: US CA Milpitas
- 专利权人: MagIC Technologies, Inc.
- 当前专利权人: MagIC Technologies, Inc.
- 当前专利权人地址: US CA Milpitas
- 代理机构: Saile Ackerman LLC
- 代理商 Stephen B. Ackerman; Billy Knowles
- 主分类号: G01B7/30
- IPC分类号: G01B7/30
摘要:
A magnetic field angle sensor for measurement of a magnetic field angle over a 360° range has magnetic tunnel junction elements oriented at multiple angles. The magnetic field angle sensor includes multiple magnetic tunnel junction elements formed on a substrate that have an anti-ferromagnetic layer and pinned synthetic multiple layer. The magnetic tunnel junction elements are patterned to have a large dimensional aspect ratio and large anisotropies the pinned synthetic multiple layer of the magnetic tunnel junction elements. The magnetic tunnel junction elements are annealed in the presence of a strong magnetic field in a direction of the reference axis and the annealed for a second time with no external magnetic field so that exchange pinning is reduced and strong stress induced anisotropies of the pinned synthetic multiple layer align magnetization of the pinned synthetic multiple layer align a long axis of each of the magnetic tunnel junction elements.
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