发明授权
- 专利标题： Flash memory device capable of reduced programming time
- 专利标题（中）： 闪存设备能够减少编程时间
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申请号： US11264168申请日： 2005-11-02
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公开(公告)号： US07636265B2公开(公告)日： 2009-12-22
- 发明人: Min-Gun Park , Jin-Wook Lee , Sang-Won Hwang
- 申请人： Min-Gun Park , Jin-Wook Lee , Sang-Won Hwang
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2005-0050470 20050613
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; G11C7/22
摘要：
A flash memory device comprising a high voltage generator circuit that is adapted to supply a program voltage having a target voltage to a selected word line is provided. The flash memory device is adapted to terminate the program interval in accordance with when the program voltage has been restored to the target voltage after dropping below the target voltage. A method for operating the flash memory device is also provided.
公开/授权文献
- US20060279994A1 Flash memory device capable of reduced programming time 公开/授权日：2006-12-14
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