发明授权
US07637269B1 Low damage method for ashing a substrate using CO2/CO-based process
有权
使用基于CO 2 / CO的工艺对基体进行灰化的低损伤方法
- 专利标题: Low damage method for ashing a substrate using CO2/CO-based process
- 专利标题(中): 使用基于CO 2 / CO的工艺对基体进行灰化的低损伤方法
-
申请号: US12511832申请日: 2009-07-29
-
公开(公告)号: US07637269B1公开(公告)日: 2009-12-29
- 发明人: Kelvin Zin , Masaru Nishino , Chong Hwan Chu , Yannick Feurprier
- 申请人: Kelvin Zin , Masaru Nishino , Chong Hwan Chu , Yannick Feurprier
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 主分类号: B08B6/00
- IPC分类号: B08B6/00
摘要:
A method for removing a mask layer and reducing damage to a patterned dielectric layer is described. The method comprises disposing a substrate in a plasma processing system, wherein the substrate has a dielectric layer formed thereon and a mask layer overlying the dielectric layer. A pattern is formed in the mask layer and a feature formed in the dielectric layer corresponding to the pattern as a result of an etching process used to transfer the pattern in the mask layer to the dielectric layer. The feature includes a sidewall with a first roughness resulting from the etching process. A process gas comprising CO2 and CO is introduced into the plasma processing system, and plasma is formed. The mask layer is removed, and a second roughness, less than the first roughness, is produced by selecting a flow rate of the CO relative to a flow rate of the CO2.