发明授权
US07638170B2 Low resistivity metal carbonitride thin film deposition by atomic layer deposition 有权
低电阻金属碳氮化物薄膜沉积原子层沉积

Low resistivity metal carbonitride thin film deposition by atomic layer deposition
摘要:
Thermal atomic layer deposition processes are provided for growing low resistivity metal carbonitride thin films. Certain embodiments include methods for forming tantalum carbonitride (TaCN) thin films. In preferred embodiments, TaCN thin films with a resistivity of less than about 1000 μΩ·cm are grown from tantalum halide precursors and precursors that contribute both carbon and nitrogen to the growing film. Such precursors include, for example, hexamethyldisilazane (HMDS), tetramethyldisilazane (TMDS), bisdiethylaminosilane (BDEAS) and hexakis(ethylamino)disilane (HEADS).
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