发明授权
- 专利标题: Low resistivity metal carbonitride thin film deposition by atomic layer deposition
- 专利标题(中): 低电阻金属碳氮化物薄膜沉积原子层沉积
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申请号: US11766367申请日: 2007-06-21
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公开(公告)号: US07638170B2公开(公告)日: 2009-12-29
- 发明人: Wei-Min Li
- 申请人: Wei-Min Li
- 申请人地址: NL BC Bilthoven
- 专利权人: ASM International N.V.
- 当前专利权人: ASM International N.V.
- 当前专利权人地址: NL BC Bilthoven
- 代理机构: Knobbe, Martens, Olson & Bear LLP
- 主分类号: C23C16/36
- IPC分类号: C23C16/36
摘要:
Thermal atomic layer deposition processes are provided for growing low resistivity metal carbonitride thin films. Certain embodiments include methods for forming tantalum carbonitride (TaCN) thin films. In preferred embodiments, TaCN thin films with a resistivity of less than about 1000 μΩ·cm are grown from tantalum halide precursors and precursors that contribute both carbon and nitrogen to the growing film. Such precursors include, for example, hexamethyldisilazane (HMDS), tetramethyldisilazane (TMDS), bisdiethylaminosilane (BDEAS) and hexakis(ethylamino)disilane (HEADS).
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