Invention Grant
- Patent Title: Optoelectronic transmitter integrated circuit and method of fabricating the same using selective growth process
- Patent Title (中): 光电发射机集成电路及其制造方法采用选择性生长工艺
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Application No.: US11872137Application Date: 2007-10-15
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Publication No.: US07638856B2Publication Date: 2009-12-29
- Inventor: Eun Soo Nam , Yong Won Kim , Seon Eui Hong , Myung Sook Oh , Bo Woo Kim
- Applicant: Eun Soo Nam , Yong Won Kim , Seon Eui Hong , Myung Sook Oh , Bo Woo Kim
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Ladas & Parry LLP
- Priority: KR10-2004-0095949 20041122
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.
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