公开(公告)号：US09270381B2

公开(公告)日：2016-02-23

申请号：US13301814

申请日：2011-11-22

Applicant: Chun Ju Youn ,  Yong-Hwan Kwon ,  Duk Jun Kim ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Kwang-Seong Choi ,  Eun Soo Nam

Inventor： Chun Ju Youn ,  Yong-Hwan Kwon ,  Duk Jun Kim ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Kwang-Seong Choi ,  Eun Soo Nam

IPC: H04B10/06 ,  H04B10/04 ,  H04B10/548 ,  H04B10/077 ,  H04B10/588 ,  H04B10/61 ,  H04L27/20 ,  H04L27/26

CPC classification number: H04B10/548 ,  H04B10/0775 ,  H04B10/588 ,  H04B10/613 ,  H04B10/6165 ,  H04L27/2096 ,  H04L27/2613 ,  H04L27/2657 ,  H04L27/2675 ,  H04L27/2692 ,  H04L27/2697

Abstract: Disclosed are a method and an apparatus for transmitting and receiving coherent optical OFDM. The apparatus includes: a transmitted OFDM digital signal processing unit outputting an in-phase (I) component digital signal and a quadrature phase (Q) component digital signal; a digital-analog converter converting the in-phase (I)-component digital signal and the quadrature-phase (Q)-component digital signal into an in-phase (I)-component analog signal and a quadrature-phase (Q)-component analog signal, respectively; an adder adding an additional pilot tone signal to each of the in-phase (I)-component analog signal and the quadrature-phase (Q)-component analog signal outputted from the digital-analog converter; and an optical I/Q modulator up-converting the in-phase (I)-component analog signal added with the additional pilot tone signal and the quadrature-phase (Q)-component analog signal added with the additional pilot tone signal to an optical domain to output a coherent optical OFDM signal including the additional pilot tone signal.

Abstract translation: 公开了用于发送和接收相干光OFDM的方法和装置。 该装置包括：发送的OFDM数字信号处理单元，输出同相（I）分量数字信号和正交相位（Q）分量数字信号; 将同相（I）分量数字信号和正交相位（Q））数字信号转换为同相（I）分量模拟信号和正交相位（Q）分量数字信号的数模转换器， 分量模拟信号; 对从数模转换器输出的同相（I）分量模拟信号和正交相（Q））模拟信号中的每一个加上附加导频音信号的加法器; 以及光学I / Q调制器，将添加有附加导频音信号的同相（I）分量模拟信号和加上附加导频音信号的正交相位（Q））模拟信号上变频到光 域以输出包括附加导频音信号的相干光OFDM信号。

公开(公告)号：US09170333B2

公开(公告)日：2015-10-27

申请号：US13334111

申请日：2011-12-22

Applicant: Bongki Mheen ,  Ki-Jun Sung ,  Jae-Sik Sim ,  Kisoo Kim ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

Inventor： Bongki Mheen ,  Ki-Jun Sung ,  Jae-Sik Sim ,  Kisoo Kim ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC: H04N13/02 ,  G01S17/89 ,  G01S7/481 ,  G01S7/486 ,  G01S7/487 ,  G01S7/491 ,  H04N13/00

CPC classification number: G01S17/89 ,  G01S7/4813 ,  G01S7/4816 ,  G01S7/4863 ,  G01S7/4868 ,  G01S7/487 ,  G01S7/4912 ,  H04N13/106 ,  H04N13/211 ,  H04N13/254 ,  H04N13/296

Abstract: Disclosed is a system of a dynamic range three-dimensional image, including: an optical detector including a gain control terminal capable of controlling an optical amplification gain; a pixel detecting module for detecting a pixel signal for configuring an image by receiving an output of the optical detector; a high dynamic range (HDR) generating module for acquiring a dynamic range image by generating a signal indicating a saturation degree of the pixel signal and combining the pixel signal based on the pixel signal detected by the pixel detecting module; and a gain control signal generating module generating an output signal for supplying required voltage to the gain control terminal of the optical detector based on the magnitude of the signal indicating the saturation degree of the pixel signal.

Abstract translation: 公开了一种动态范围三维图像的系统，包括：光检测器，其包括能够控制光放大增益的增益控制端; 像素检测模块，用于通过接收光学检测器的输出来检测用于配置图像的像素信号; 高动态范围（HDR）生成模块，用于通过产生指示像素信号的饱和度的信号来获取动态范围图像，并且基于由像素检测模块检测的像素信号组合像素信号; 以及增益控制信号生成模块，其基于表示像素信号的饱和度的信号的大小，生成用于向光检测器的增益控制端子提供所需电压的输出信号。

公开(公告)号：US08723222B2

公开(公告)日：2014-05-13

申请号：US13548522

申请日：2012-07-13

Applicant: Sung Bum Bae ,  Eun Soo Nam ,  Jae Kyoung Mun ,  Sung Bock Kim ,  Hae Cheon Kim ,  Chull Won Ju ,  Sang Choon Ko ,  Jong-Won Lim ,  Ho Kyun Ahn ,  Woo Jin Chang ,  Young Rak Park

Inventor： Sung Bum Bae ,  Eun Soo Nam ,  Jae Kyoung Mun ,  Sung Bock Kim ,  Hae Cheon Kim ,  Chull Won Ju ,  Sang Choon Ko ,  Jong-Won Lim ,  Ho Kyun Ahn ,  Woo Jin Chang ,  Young Rak Park

IPC: H01L31/102

CPC classification number: H01L29/66446 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0883

Abstract: The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.

Abstract translation: 本发明涉及一种氮化物电子器件及其制造方法，特别涉及一种氮化物电子器件及其制造方法，该氮化物电子器件及其制造方法可以通过再生技术在同一衬底上实现各种氮化物一体化结构（ 用于包括III族元素如镓（Ga），铝（Al）和铟（In））和氮（III）的III族氮化物半导体电子器件中的半绝缘氮化镓（GaN）层的外延横向过度生长：ELOG） 。

公开(公告)号：US08609474B2

公开(公告)日：2013-12-17

申请号：US13274367

申请日：2011-10-17

Applicant: Jong-Won Lim ,  Hokyun Ahn ,  Dong Min Kang ,  Woojin Chang ,  Hae Cheon Kim ,  Eun Soo Nam

Inventor： Jong-Won Lim ,  Hokyun Ahn ,  Dong Min Kang ,  Woojin Chang ,  Hae Cheon Kim ,  Eun Soo Nam

IPC: H01L29/772 ,  H01L21/28 ,  H01L29/423 ,  H01L29/40

CPC classification number: H01L29/42376 ,  H01L29/2003 ,  H01L29/40 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/812

Abstract: Disclosed are a semiconductor device and a method of manufacturing the same. In the semiconductor device according to an exemplary embodiment of the present disclosure, at the time of forming a source electrode, a drain electrode, a field plate electrode, and a gate electrode on a substrate having a heterojunction structure such as AlGaN/GaN, the field plate electrode made of the same metal as the gate electrode is formed on the side surface of a second support part positioned below a head part of the gate electrode so as to prevent the gate electrode from collapsing and improve high-frequency and high-voltage characteristic of the semiconductor device.

Abstract translation: 公开了一种半导体器件及其制造方法。 在根据本公开的示例性实施例的半导体器件中，在具有诸如AlGaN / GaN的异质结结构的衬底上形成源电极，漏电极，场板电极和栅电极时， 由与栅电极相同的金属制成的场板电极形成在位于栅电极的头部下方的第二支撑部分的侧表面上，以防止栅电极塌陷并改善高频和高电压 半导体器件的特性。

公开(公告)号：US08592247B2

公开(公告)日：2013-11-26

申请号：US13273257

申请日：2011-10-14

Applicant: Jae Sik Sim ,  Ki Soo Kim ,  Bong Ki Mheen ,  Myoung Sook Oh ,  Yong Hwan Kwon ,  Eun Soo Nam

Inventor： Jae Sik Sim ,  Ki Soo Kim ,  Bong Ki Mheen ,  Myoung Sook Oh ,  Yong Hwan Kwon ,  Eun Soo Nam

IPC: H01L21/00

CPC classification number: H01L31/107 ,  H01L31/184 ,  Y02E10/544

Abstract: A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.

Abstract translation: 一种方法包括：依次在衬底表面上生长光吸收层，分级层，电场缓冲层和放大层，形成外延晶片; 在放大层上形成扩散控制层; 形成用于保护扩散控制层上的扩散控制层的保护层; 通过从保护层蚀刻到放大层的预定深度来形成蚀刻部分; 通过图案化所述保护层来形成第一图案形成部分; 通过使扩散材料扩散到所述蚀刻部分和所述第一图案形成部分，在所述放大层处形成接合区域和保护区域; 去除扩散控制层和保护层，并形成连接到放大层上的结区的第一电极; 以及在所述基板的后表面上形成第二电极。

公开(公告)号：US20130156362A1

公开(公告)日：2013-06-20

申请号：US13611085

申请日：2012-09-12

Applicant: Duk Jun KIM ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Chun Ju Youn ,  Kwang-Seong Choi ,  Yong-Hwan Kwon ,  Eun Soo Nam

Inventor： Duk Jun KIM ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Chun Ju Youn ,  Kwang-Seong Choi ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC: G02B6/26 ,  G02B6/00

CPC classification number: G02B6/1228 ,  G02B6/126

Abstract: Provided is a core which reduces optic splice loss between discontinuous optical waveguides. The core includes a first waveguide propagation portion having first light-receiving width, a first lightwave discontinuous portion having second light-receiving width, a first taper structure portion having both ends connected to the first lightwave propagation portion and to the first lightwave discontinuous portion, respectively and decreasing in light-receiving width as it goes from the first lightwave propagation portion to the first lightwave discontinuous portion, a second lightwave propagation portion having third light-receiving width, a second lightwave discontinuous portion having fourth light-receiving width, and a second taper structure portion having both ends connected to the second lightwave propagation portion and to the second lightwave discontinuous portion, respectively and decreasing in light-receiving width as it goes from the second lightwave propagation portion to the second lightwave discontinuous portion.

Abstract translation: 提供了减少不连续光波导之间的光接头损耗的核心。 该芯包括具有第一光接收宽度的第一波导传播部分，具有第二光接收宽度的第一光波不连续部分，具有连接到第一光波传播部分的两端和第一光波不连续部分的第一锥形结构部分， 分别从第一光波传播部分到第一光波不连续部分的光接收宽度减小，具有第三受光宽度的第二光波传播部分，具有第四光接收宽度的第二光波不连续部分和 第二锥形结构部分，其两端分别连接到第二光波传播部分和第二光波不连续部分，并且随着从第二光波传播部分到第二光波不连续部分的光接收宽度的减小，第二锥形结构部分。

公开(公告)号：US20130020649A1

公开(公告)日：2013-01-24

申请号：US13548522

申请日：2012-07-13

Applicant: Sung Bum BAE ,  Eun Soo NAM ,  Jae Kyoung MUN ,  Sung Bock KIM ,  Hae Cheon KIM ,  Chull Won JU ,  Sang Choon KO ,  Jong-Won LIM ,  Ho Kyun AHN ,  Woo Jin CHANG ,  Young Rak PARK

Inventor： Sung Bum BAE ,  Eun Soo NAM ,  Jae Kyoung MUN ,  Sung Bock KIM ,  Hae Cheon KIM ,  Chull Won JU ,  Sang Choon KO ,  Jong-Won LIM ,  Ho Kyun AHN ,  Woo Jin CHANG ,  Young Rak PARK

IPC: H01L27/088 ,  H01L21/20 ,  H01L27/08

CPC classification number: H01L29/66446 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0883

Abstract: The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.

Abstract translation: 本发明涉及一种氮化物电子器件及其制造方法，特别涉及一种氮化物电子器件及其制造方法，该氮化物电子器件及其制造方法可以通过再生技术在同一衬底上实现各种氮化物一体化结构（ 用于包括III族元素如镓（Ga），铝（Al）和铟（In））和氮（III）的III族氮化物半导体电子器件中的半绝缘氮化镓（GaN）层的外延横向过度生长：ELOG） 。

公开(公告)号：US08272789B2

公开(公告)日：2012-09-25

申请号：US12788237

申请日：2010-05-26

Applicant: Joong-Seon Choe ,  Yong-Hwan Kwon ,  Chun Ju Youn ,  Jong-Hoi Kim ,  Kwang-Seong Choi ,  Eun Soo Nam

Inventor： Joong-Seon Choe ,  Yong-Hwan Kwon ,  Chun Ju Youn ,  Jong-Hoi Kim ,  Kwang-Seong Choi ,  Eun Soo Nam

IPC: G02B6/38

CPC classification number: G02B6/3825 ,  G02B6/3894

Abstract: Provided are an adapter assembly and method for compensating optical fibers for a length difference. The adapter assembly includes a first adapter, a second adapter, and a member. The first adapter is configured to be connected to at least one optical communication unit. The second adapter is configured to be connected to at least another optical communication unit and be coupled to the first adapter. The member is configured to be interposed between the first and second adapters for providing an optical signal transmission path between the optical communication units. Owing to the member, a length difference between optical fibers can be compensated for.

Abstract translation: 提供一种用于补偿光纤长度差的适配器组件和方法。 适配器组件包括第一适配器，第二适配器和构件。 第一适配器被配置为连接到至少一个光通信单元。 第二适配器被配置为连接到至少另一个光通信单元并且被耦合到第一适配器。 构件被配置为插入在第一和第二适配器之间，以在光通信单元之间提供光信号传输路径。 由于该构件，可以补偿光纤之间的长度差。

公开(公告)号：US20120153361A1

公开(公告)日：2012-06-21

申请号：US13307069

申请日：2011-11-30

Applicant: Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Byoung-Gue Min ,  Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

Inventor： Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Byoung-Gue Min ,  Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

IPC: H01L21/283 ,  H01L29/808

CPC classification number: H01L29/7831 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/7787 ,  H01L29/812

Abstract: Disclosed are a field-effect transistor and a manufacturing method thereof. The disclosed field-effect transistor includes: a semiconductor substrate; a source ohmic metal layer formed on one side of the semiconductor substrate; a drain ohmic metal layer formed on another side of the semiconductor substrate; a gate electrode formed between the source ohmic metal layer and the drain ohmic metal layer, on an upper portion of the semiconductor substrate; an insulating film formed on the semiconductor substrate's upper portion including the source ohmic metal layer, the drain ohmic metal layer and the gate electrode; and a plurality of field electrodes formed on an upper portion of the insulating film, wherein the insulating film below the respective field electrodes has different thicknesses.

Abstract translation: 公开了场效应晶体管及其制造方法。 所公开的场效应晶体管包括：半导体衬底; 源极欧姆金属层，形成在半导体衬底的一侧上; 形成在所述半导体衬底的另一侧上的漏极欧姆金属层; 在所述源极欧姆金属层和所述漏极欧姆金属层之间形成的栅电极，位于所述半导体衬底的上部; 形成在包括源极欧姆金属层，漏极欧姆金属层和栅电极的半导体衬底的上部上的绝缘膜; 以及形成在绝缘膜的上部的多个场电极，其中，各个场电极下方的绝缘膜具有不同的厚度。

公开(公告)号：US08130041B2

公开(公告)日：2012-03-06

申请号：US12960153

申请日：2010-12-03

Applicant: Seong-Il Kim ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

Inventor： Seong-Il Kim ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

IPC: H03F3/68

CPC classification number: H03F3/245 ,  H03F1/0261 ,  H03F1/52 ,  H03F3/19 ,  H03F3/211 ,  H03F2200/18 ,  H03F2200/451

Abstract: Provided is a power amplifier device. The power amplifier device includes: a cutoff unit cutting off a direct current (DC) component of a signal delivered from a signal input terminal; a circuit protecting unit connected to the cutoff unit and stabilizing a signal delivered from the cutoff unit; and an amplification unit connected to the circuit protecting unit and amplifying a signal delivered from the circuit protecting unit, wherein the amplification unit comprises a plurality of transistors connected in parallel to the circuit protecting unit and the circuit protecting unit comprises resistors connected to between bases of the plurality of transistors.

Abstract translation: 提供了一种功率放大器装置。 功率放大器装置包括：切断单元，切断从信号输入端子发送的信号的直流（DC）分量; 连接到所述切断单元的电路保护单元，并且稳定从所述切断单元传送的信号; 以及放大单元，连接到所述电路保护单元并放大从所述电路保护单元传送的信号，其中所述放大单元包括与所述电路保护单元并联连接的多个晶体管，所述电路保护单元包括电阻器， 多个晶体管。