发明授权
- 专利标题： Methods of forming moisture barrier for low k film integration with anti-reflective layers
- 专利标题（中）： 形成与抗反射层低k膜一体化的防潮层的方法
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申请号： US11168013申请日： 2005-06-27
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公开(公告)号： US07642202B1公开(公告)日： 2010-01-05
- 发明人: Ming Li , Bart Van Schravendijk , Tom Mountsier , Chiu Chi , Kevin Ilcisin , Julian Hsieh
- 申请人： Ming Li , Bart Van Schravendijk , Tom Mountsier , Chiu Chi , Kevin Ilcisin , Julian Hsieh
- 申请人地址： US CA San Jose
- 专利权人： Novellus Systems, Inc.
- 当前专利权人： Novellus Systems, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Weaver Austin Villeneuve & Sampson LLP
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, a substantially hermetic layer with acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free moisture barrier anti-reflective layer produced by this technique improves plasma etch of features such as vias in subsequent processing steps.
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