公开(公告)号：US07642202B1

公开(公告)日：2010-01-05

申请号：US11168013

申请日：2005-06-27

申请人： Ming Li ,  Bart Van Schravendijk ,  Tom Mountsier ,  Chiu Chi ,  Kevin Ilcisin ,  Julian Hsieh

发明人： Ming Li ,  Bart Van Schravendijk ,  Tom Mountsier ,  Chiu Chi ,  Kevin Ilcisin ,  Julian Hsieh

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/401 ,  G03F7/091 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/31612 ,  H01L21/76816

摘要： A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, a substantially hermetic layer with acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free moisture barrier anti-reflective layer produced by this technique improves plasma etch of features such as vias in subsequent processing steps.

摘要翻译： 使用碳，硅和氧源的气体混合物，在化学气相沉积工艺（任选地等离子体增强）中制造用于半导体光刻中的无氮抗反射层。 通过改变工艺参数，可以获得具有折射率n和消光系数k的可接受值的基本上密封层。 通过该技术生产的无氮防潮抗反射层改善了后续处理步骤中诸如通孔等特征的等离子体蚀刻。

公开(公告)号：US08003549B1

公开(公告)日：2011-08-23

申请号：US12623305

申请日：2009-11-20

申请人： Ming Li ,  Bart Van Schravendijk ,  Tom Mountsier ,  Chiu Chi ,  Kevin Ilcisin ,  Julian Hsieh

发明人： Ming Li ,  Bart Van Schravendijk ,  Tom Mountsier ,  Chiu Chi ,  Kevin Ilcisin ,  Julian Hsieh

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/401 ,  G03F7/091 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/31612 ,  H01L21/76816

摘要： A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, a substantially hermetic layer with acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free moisture barrier anti-reflective layer produced by this technique improves plasma etch of features such as vias in subsequent processing steps.

摘要翻译： 使用碳，硅和氧源的气体混合物，在化学气相沉积工艺（任选地等离子体增强）中制造用于半导体光刻中的无氮抗反射层。 通过改变工艺参数，可以获得具有折射率n和消光系数k的可接受值的基本上密封层。 通过该技术生产的无氮防潮抗反射层改善了后续处理步骤中诸如通孔等特征的等离子体蚀刻。

公开(公告)号：US07052988B1

公开(公告)日：2006-05-30

申请号：US10773821

申请日：2004-02-05

申请人： Bart van Schravendijk ,  Ming Li ,  Jason Tian ,  Tom Mountsier ,  M. Ziaul Karim

发明人： Bart van Schravendijk ,  Ming Li ,  Jason Tian ,  Tom Mountsier ,  M. Ziaul Karim

IPC分类号： H01L21/44

CPC分类号： H01L21/02126 ,  C23C16/401 ,  G03F7/091 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/31612

摘要： A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free anti-reflective layer produced by this technique eliminates the mushrooming and footing problems found with conventional anti-reflective layers.

摘要翻译： 使用碳，硅和氧源的气体混合物，在化学气相沉积工艺（任选地等离子体增强）中制造用于半导体光刻中的无氮抗反射层。 通过改变工艺参数，可以获得折射率n和消光系数k的可接受值。 通过这种技术生产的无氮抗反射层消除了常规抗反射层发现的萌发和基础问题。

公开(公告)号：US06720251B1

公开(公告)日：2004-04-13

申请号：US09990197

申请日：2001-11-21

申请人： Bart van Schravendijk ,  Ming Li ,  Jason Tian ,  Tom Mountsier ,  M. Zlaul Karim

发明人： Bart van Schravendijk ,  Ming Li ,  Jason Tian ,  Tom Mountsier ,  M. Zlaul Karim

IPC分类号： H01L21205

CPC分类号： H01L21/02126 ,  C23C16/401 ,  G03F7/091 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/31612

摘要： A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free anti-reflective layer produced by this technique eliminates the mushrooming and footing problems found with conventional anti-reflective layers.

摘要翻译： 使用碳，硅和氧源的气体混合物，在化学气相沉积工艺（任选地等离子体增强）中制造用于半导体光刻中的无氮抗反射层。 通过改变工艺参数，可以获得折射率n和消光系数k的可接受值。 通过这种技术生产的无氮抗反射层消除了常规抗反射层发现的萌发和基础问题。

公开(公告)号：USD981136S1

公开(公告)日：2023-03-21

申请号：US29850094

申请日：2022-08-17

申请人： Pan Liao ,  Ming Li

设计人： Ming Li ,  Xiaoyan Jiang

公开(公告)号：US10298946B2

公开(公告)日：2019-05-21

申请号：US14355785

申请日：2012-07-24

申请人： Ming Li ,  Ping Wu

发明人： Ming Li ,  Ping Wu

IPC分类号： H04N19/46 ,  H04N19/70 ,  H04N19/174

摘要： Provided is a method for encoding parameter sets at slice level. The method includes: when there are one or more parameter sets, in which the coding tool parameters are identical to the coding tool parameters of a part of coding tools used for the current slice, in the existing parameter sets, encoding the identifiers of parameter sets into bit-stream of the current slice, wherein a parameter set contains common information of the coding tools used in the process of encoding/decoding slice(s). Correspondingly, also provided is a method for decoding parameter sets at slice level and a device for encoding and decoding parameter sets at slice level, which can make full use of the encoded parameter set information when the slice header refers to a plurality of parameter sets, implement flexible configuration of the coding tools used in the process of encoding/decoding slice(s) and reduce information redundancy.

公开(公告)号：US10012224B2

公开(公告)日：2018-07-03

申请号：US13807399

申请日：2010-10-11

申请人： Ming Li ,  Zhengzhong Li

发明人： Ming Li ,  Zhengzhong Li

IPC分类号： F02B75/06 ,  F04B39/00 ,  F16H21/22 ,  F02B75/32 ,  F16F15/28 ,  F16H21/36 ,  F01B9/06 ,  F04B53/00

CPC分类号： F04B39/0094 ,  F01B9/06 ,  F02B75/32 ,  F04B9/045 ,  F04B27/053 ,  F04B53/006 ,  F16F15/283 ,  F16H21/22 ,  F16H21/36 ,  Y10T74/18208

摘要： A crank circular slider mechanism includes a crankshaft having at least one crank pin; at least one circular slider with an eccentric hole which fits over the crank pin; at least one reciprocating element with a circular slider-receiving hole, which receives the circular slider in a rotatable manner; and at least one dynamic balance rotary block with an eccentric hole that fits over the crank pin. The dynamic balance rotary block and the adjacent circular slider are fixed together. By means of proper selection of a mounting place and a mass of the dynamic balance rotary block, the mechanism can convert reciprocating inertia of the reciprocating element into rotation inertia so as to obtain a balancing effect. An internal combustion engine and a compressor may be equipped with the crank circular slider mechanism.

公开(公告)号：US10000844B2

公开(公告)日：2018-06-19

申请号：US13698884

申请日：2011-08-30

申请人： Wei Kong ,  Zijing Lin ,  Ming Li ,  Bin Xie ,  Haiqian Wang ,  Yousong Jiang ,  Ekishu Nagae

发明人： Wei Kong ,  Zijing Lin ,  Ming Li ,  Bin Xie ,  Haiqian Wang ,  Yousong Jiang ,  Ekishu Nagae

IPC分类号： C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/35 ,  H01J37/34 ,  H01F7/08 ,  H01J25/50

CPC分类号： C23C14/351 ,  C23C14/35 ,  H01F7/081 ,  H01J25/50 ,  H01J37/3405 ,  H01J37/3452 ,  H01J37/3461

摘要： A magnetic field generator arranged behind a target and for generating a magnetic field on a front surface of the target based on magnetic force lines can include a ring-shaped outer magnetic body having a pole axis in a parallel direction (X-direction) with respect to the target surface, a center magnetic body arranged on an inner side of the outer magnetic body and having a pole axis in a parallel direction (X-direction) with the direction of the pole axis of the outer magnetic body, a yoke plate for supporting the outer magnetic body and the center magnetic body from behind, and a magnetic permeable plate for changing a magnetic field distribution of the front surface of the target. The magnetic permeable plate is arranged so as to be supported by the yoke plate from behind.

公开(公告)号：US20170181784A1

公开(公告)日：2017-06-29

申请号：US15044116

申请日：2016-02-16

申请人： Ming Li

发明人： Ming Li

IPC分类号： A61B17/80 ,  A61B17/84 ,  A61B17/88

摘要： A general anatomic self-locking plate for medial acetabulum includes a left plate and a right plate mirrored with respect to the left plate. The right plate is a one-piece and includes a horizontal plate body and a vertical plate body. The horizontal plate body and the vertical plate body form a T shape. A through-hole is provided on the vertical plate body along a length direction thereof. Hole pathways of screw holes in the horizontal plate body lean downwardly along the free end of the horizontal plate body. The self-locking plate further includes stress bridges, automatic reduction holes and temporary positioning holes. An auxiliary apparatus of an anatomic self-locking plate for medial acetabulum includes a locking sleeve, a screw placing sleeve and a pair of gripping pliers. The right plate has excellent reduction and stable fixation, and is beneficial to accurately fix fractures without shaping and cutting during operation.

公开(公告)号：US09337017B2

公开(公告)日：2016-05-10

申请号：US14758307

申请日：2014-08-11

申请人： Shaohai Zeng ,  Qingyun Zuo ,  Ming Li

发明人： Shaohai Zeng ,  Qingyun Zuo ,  Ming Li

IPC分类号： H01L21/02 ,  H01L21/302 ,  H01L21/768 ,  H01L21/3105

CPC分类号： H01L21/02274 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/0231 ,  H01L21/02348 ,  H01L21/302 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

摘要： A method for repairing damages to sidewalls of an ultra-low dielectric constant film is disclosed by the present invention comprises the following steps: depositing an ultra-low dielectric constant film on an semiconductor substrate; dry-etching the ultra-low dielectric constant film to form a sidewall structure thereof; performing wet cleaning by using a chemical agent containing an unsaturated hydrocarbon having —O—C(Re)x; and performing ultraviolet curing. The present invention can restore pores size and porosity of the ultra-low dielectric constant film, and to keep effective dielectric constant to a minimum.

摘要翻译： 本发明公开了一种修复超低介电常数膜侧壁损伤的方法，包括以下步骤：在半导体衬底上沉积超低介电常数膜; 干蚀刻超低介电常数膜以形成其侧壁结构; 通过使用含有具有-O-C（Re）x的不饱和烃的化学试剂进行湿法清洗; 并进行紫外线固化。 本发明可以恢复超低介电常数膜的孔径和孔隙率，并将有效介电常数保持在最小值。