发明授权
- 专利标题： Semiconductor device having a pillar structure
- 专利标题（中）： 具有柱结构的半导体器件
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申请号： US10780701申请日： 2004-02-19
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公开(公告)号： US07642650B2公开(公告)日： 2010-01-05
- 发明人: Iwao Sugiura , Takahisa Namiki , Yoshihiro Matsuoka
- 申请人： Iwao Sugiura , Takahisa Namiki , Yoshihiro Matsuoka
- 申请人地址： JP Tokyo
- 专利权人： Fujitsu Microelectronics Limited
- 当前专利权人： Fujitsu Microelectronics Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2003-047768 20030225; JP2003-280004 20030725
- 主分类号： H01L23/52
- IPC分类号： H01L23/52
摘要：
A semiconductor device includes a first multilayer interconnection structure formed on a substrate and a second multilayer interconnection structure formed on the first multilayer interconnection structure, wherein the first multilayer interconnection structure includes a pillar extending from a surface of the substrate and reaching at least the second multilayer interconnection structure.
公开/授权文献
- US20040164418A1 Semiconductor device having a pillar structure 公开/授权日：2004-08-26
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