发明授权
- 专利标题: High capacitance density vertical natural capacitors
- 专利标题(中): 高电容密度垂直天然电容
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申请号: US12194566申请日: 2008-08-20
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公开(公告)号: US07643268B2公开(公告)日: 2010-01-05
- 发明人: Anil K. Chinthakindi
- 申请人: Anil K. Chinthakindi
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Gibb I.P. Law Firm, LLC
- 代理商 Yuanmin Cai, Esq.
- 主分类号: H01G4/228
- IPC分类号: H01G4/228 ; H01L27/108 ; H01L29/94
摘要:
Disclosed are embodiments of a capacitor with inter-digitated vertical plates and a method of forming the capacitor such that the effective gap distance between plates is reduced. This gap width reduction significantly increases the capacitance density of the capacitor. Gap width reduction is accomplished during back end of the line processing by masking connecting points with nodes, by etching the dielectric material from between the vertical plates and by etching a sacrificial material from below the vertical plates. Etching of the dielectric material from between the plates forms air gaps and various techniques can be used to cause the plates to collapse in on these air gaps, once the sacrificial material is removed. Any remaining air gaps can be filled by depositing a second dielectric material (e.g., a high k dielectric), which will further increase the capacitance density and will encapsulate the capacitor in order to make the reduced distance between the vertical plates permanent.
公开/授权文献
- US20080304203A1 HIGH CAPACITANCE DENSITY VERTICAL NATURAL CAPACITORS 公开/授权日:2008-12-11
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