Invention Grant
- Patent Title: Method of manufacturing a silicon dioxide layer
- Patent Title (中): 制造二氧化硅层的方法
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Application No.: US11677696Application Date: 2007-02-22
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Publication No.: US07645486B2Publication Date: 2010-01-12
- Inventor: Konstantin Bourdelle , Nicolas Daval , Ian Cayrefourcq , Steven R. A. Van Aerde , Marinus J. M. De Blank , Cornelius A. Van Der Jeugd
- Applicant: Konstantin Bourdelle , Nicolas Daval , Ian Cayrefourcq , Steven R. A. Van Aerde , Marinus J. M. De Blank , Cornelius A. Van Der Jeugd
- Applicant Address: FR Bernin NL Bilthoven
- Assignee: S.O.I. Tec Silicon on Insulator Technologies,ASM International N.V.
- Current Assignee: S.O.I. Tec Silicon on Insulator Technologies,ASM International N.V.
- Current Assignee Address: FR Bernin NL Bilthoven
- Agency: Winston & Strawn LLP
- Main IPC: C23C16/40
- IPC: C23C16/40
Abstract:
The invention relates to a of manufacturing a silicon dioxide layer of low roughness, that includes depositing a layer of silicon dioxide over a substrate by a low pressure chemical vapor deposition (LPCVD) process, the deposition process employing simultaneously a flow of tetraethylorthosilicate (TEOS) as the source material for the film deposition and a flow of a diluant gas that it not reactive with TEOS, so that the diluant gas/TEOS flow ratio is between 0.5 and 100; and annealing the silicon dioxide layer at a temperature between 600° C. and 1200° C., for a duration between 10 minutes and 6 hours.
Public/Granted literature
- US20070134887A1 METHOD OF MANUFACTURING A SILICON DIOXIDE LAYER Public/Granted day:2007-06-14
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