Invention Grant
- Patent Title: Thin film transistor and thin film transistor array panel
- Patent Title (中): 薄膜晶体管和薄膜晶体管阵列面板
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Application No.: US10996303Application Date: 2004-11-22
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Publication No.: US07646044B2Publication Date: 2010-01-12
- Inventor: Jong-Moo Huh , Joon-Hak Oh , Joon-Hoo Choi , In-Su Joo , Beohm-Rock Choi
- Applicant: Jong-Moo Huh , Joon-Hak Oh , Joon-Hoo Choi , In-Su Joo , Beohm-Rock Choi
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Innovation Counsel LLP
- Priority: KR10-2003-0082565 20031120
- Main IPC: G02F1/136
- IPC: G02F1/136
Abstract:
A thin film transistor is provided, which includes: a semiconductor layer including an intrinsic portion; a gate electrode overlapping the intrinsic portion; a gate insulating layer disposed between the semiconductor layer and the gate electrode; and source and drain electrodes that have edges opposing each other with respect to the intrinsic portion of the semiconductor layer and are connected to the semiconductor layer, wherein the intrinsic portion has a curved surface contacting the gate insulating layer.
Public/Granted literature
- US20050127367A1 Thin film transistor and thin film transistor array panel Public/Granted day:2005-06-16
Information query
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