Invention Grant
US07646050B2 Ferroelectric type semiconductor device having a barrier TiO and TiON type dielectric film
有权
具有阻挡TiO和TiON型电介质膜的铁电型半导体器件
- Patent Title: Ferroelectric type semiconductor device having a barrier TiO and TiON type dielectric film
- Patent Title (中): 具有阻挡TiO和TiON型电介质膜的铁电型半导体器件
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Application No.: US11306387Application Date: 2005-12-27
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Publication No.: US07646050B2Publication Date: 2010-01-12
- Inventor: Kazuhide Abe
- Applicant: Kazuhide Abe
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, PC
- Priority: JP2005-018390 20050126
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/02 ; H01L27/115 ; H01L21/8246
Abstract:
A semiconductor device includes a semiconductor substrate, a first electrode that is formed over said semiconductor substrate, a capacitive insulating film that is formed on the first electrode and is made of a metal oxide ferroelectric, a second electrode that is formed on the capacitive insulating film, an insulating film that has a first opening exposing a portion of an upper side of the second electrode and is formed so that it covers the first electrode, the capacitive insulating film, and the second electrode, a first barrier film having an amorphous structure which is formed inside the first opening and on the insulating film, and a wiring film that is formed over the first barrier film.
Public/Granted literature
- US20060220083A1 Semiconductor device Public/Granted day:2006-10-05
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