Invention Grant
US07648848B2 Semiconductor integrated circuit production method and device including preparing a plurality of SOI substrates, grouping SOI substrates having mutual similarities and adjusting their layer thicknesses simultaneously
失效
半导体集成电路制造方法和装置，包括制备多个SOI衬底，对具有相互相似性的SOI衬底进行分组并同时调节它们的层厚度
- Patent Title: Semiconductor integrated circuit production method and device including preparing a plurality of SOI substrates, grouping SOI substrates having mutual similarities and adjusting their layer thicknesses simultaneously
- Patent Title (中): 半导体集成电路制造方法和装置，包括制备多个SOI衬底，对具有相互相似性的SOI衬底进行分组并同时调节它们的层厚度
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Application No.: US12073493Application Date: 2008-03-06
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Publication No.: US07648848B2Publication Date: 2010-01-19
- Inventor: Michihiro Ebe , Masao Okihara
- Applicant: Michihiro Ebe , Masao Okihara
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, PC
- Priority: JP2007-072481 20070320
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/00 ; H01L21/84 ; H01L21/302 ; H01L21/461
Abstract:
A semiconductor integrated circuit production method prepares an SOI layer thickness database that correlates measurement data of each SOI layer thickness with each SOI substrate identification data. The production method extracts the measurement data for each SOI substrate from the SOI layer thickness database, and carries out layer thickness adjustment surface treatment for the SOI substrates based on these data. A semiconductor integrated circuit production device includes an SOI layer thickness database storage unit for storing the SOI layer thickness database, and a layer thickness adjustment conditions control unit for extracting the measurement data for each SOI substrate from the SOI layer thickness database and deciding conditions for the layer thickness adjustment surface treatment based on these data. The semiconductor integrated circuit production device also includes a surface treatment unit that adjusts SOI layer thickness by carrying out the surface treatment on the SOI layers in accordance with the decided conditions.
Public/Granted literature
- US20080233664A1 Semiconductor integrated circuit production method and device Public/Granted day:2008-09-25
Information query
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