发明授权
- 专利标题： Method of pattern formation in semiconductor fabrication
- 专利标题（中）： 半导体制造中图案形成的方法
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申请号： US11841485申请日： 2007-08-20
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公开(公告)号： US07648918B2公开(公告)日： 2010-01-19
- 发明人: George Liu , Kuei Shun Chen , Vencent Chang , Shang-Wen Chang
- 申请人： George Liu , Kuei Shun Chen , Vencent Chang , Shang-Wen Chang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/467
- IPC分类号： H01L21/467
摘要：
Provided is a method of fabricating a semiconductor device. The method includes providing a substrate, forming a photo acid generator (PAG) layer on the substrate, exposing the PAG layer to radiation, and forming a photoresist layer on the exposed PAG layer. The exposed PAG layer generates an acid. The acid decomposes a portion of the formed photoresist layer. In one embodiment, the PAG layer includes organic BARC. The decomposed portion of the photoresist layer may be used as a masking element.
公开/授权文献
- US20090053899A1 METHOD OF PATTERN FORMATION IN SEMICONDUCTOR FABRICATION 公开/授权日：2009-02-26
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