发明授权
- 专利标题: Nano wires and method of manufacturing the same
- 专利标题(中): 纳米线和制造方法相同
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申请号: US11369859申请日: 2006-03-08
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公开(公告)号: US07649192B2公开(公告)日: 2010-01-19
- 发明人: Byoung-lyong Choi , Eun-kyung Lee
- 申请人: Byoung-lyong Choi , Eun-kyung Lee
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Cantor Colburn LLP
- 优先权: KR10-2005-0019579 20050309
- 主分类号: H01L29/06
- IPC分类号: H01L29/06
摘要:
Provided are nano wires and a method of manufacturing the same. The method includes forming microgrooves having a plurality of microcavities, the microgrooves forming a regular pattern on a surface of a silicon substrate; forming a metal layer on the silicon substrate by depositing a material which acts as a catalyst to form nano wires on the silicon substrate; agglomerating the metal layer within the microgrooves on the surface of the silicon substrate by heating the metal layer to form catalysts; and growing the nano wires between the catalysts and the silicon substrate using a thermal process.
公开/授权文献
- US20060212975A1 Nano wires and method of manufacturing the same 公开/授权日:2006-09-21