发明授权
US07651829B2 Positive resist material and pattern formation method using the same
有权
正抗蚀剂材料和使用其的图案形成方法
- 专利标题: Positive resist material and pattern formation method using the same
- 专利标题(中): 正抗蚀剂材料和使用其的图案形成方法
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申请号: US10854568申请日: 2004-05-26
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公开(公告)号: US07651829B2公开(公告)日: 2010-01-26
- 发明人: Yoshitaka Hamada , Fujio Yagihashi , Mutsuo Nakashima , Kazumi Noda , Katsuya Takemura
- 申请人: Yoshitaka Hamada , Fujio Yagihashi , Mutsuo Nakashima , Kazumi Noda , Katsuya Takemura
- 申请人地址: JP Niigata-Ken
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JP Niigata-Ken
- 代理机构: Alston & Bird LLP
- 优先权: JP2003-148471 20030527
- 主分类号: G03F7/039
- IPC分类号: G03F7/039 ; G03F7/20 ; G03F7/30 ; G03F7/36 ; G03F7/38
摘要:
Provided is a positive resist material, particularly a chemically amplified positive resist material having higher sensitivity, higher resolution, a higher exposure latitude and better process adaptability than conventional positive resist materials, and providing a good pattern profile after exposure, particularly having lessened line edge roughness and exhibiting excellent etching resistance. These materials may contain, preferably an organic solvent and acid generator, more preferably a dissolution inhibitor or a basic compound and/or a surfactant. Provided is a positive resist material comprising a polymer comprising at least one monomer unit selected from a group consisting of a monomer unit (A), a monomer unit (B) and a monomer unit (C) represented by the following formula (1); and having a glass transition temperature (Tg) of 100° C. or greater.
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