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US07651916B2 Electronic device including trenches and discontinuous storage elements and processes of forming and using the same 有权
包括沟槽和不连续存储元件的电子器件及其形成和使用的方法

  • 专利标题： Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
  • 专利标题（中）： 包括沟槽和不连续存储元件的电子器件及其形成和使用的方法
  • 申请号： US11626768
    申请日： 2007-01-24
  • 公开(公告)号： US07651916B2
    公开(公告)日： 2010-01-26
  • 发明人: Chi-Nan Li , Cheong Min Hong
  • 申请人： Chi-Nan Li , Cheong Min Hong
  • 申请人地址： US TX Austin
  • 专利权人： Freescale Semiconductor, Inc
  • 当前专利权人： Freescale Semiconductor, Inc
  • 当前专利权人地址： US TX Austin
  • 主分类号： H01L21/336
  • IPC分类号： H01L21/336
Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
摘要：
An electronic device can include a substrate including a first trench having a first bottom and a first wall. The electrode device can also include a first gate electrode within the first trench and adjacent to the first wall and overlying the first bottom of the first trench, and a second gate electrode within the first trench and adjacent to the first gate electrode and overlying the first bottom of the first trench. The electronic device can further include discontinuous storage elements including a first set of discontinuous storage elements, wherein the first set of the discontinuous storage elements lies between (i) the first gate electrode or the second gate electrode and (ii) the first bottom of the first trench. Processes of forming and using the electronic device are also described.
摘要（中）：

电子设备可以包括包括具有第一底部和第一壁的第一沟槽的衬底。 所述电极装置还可以包括在所述第一沟槽内并且邻近所述第一壁并且覆盖所述第一沟槽的所述第一底部的第一栅极电极以及所述第一沟槽内的第一栅电极并且与所述第一栅电极相邻并且覆盖所述第一栅电极 底部的第一个沟槽。 电子设备还可以包括不连续的存储元件，其包括第一组不连续存储元件，其中第一组不连续存储元件位于（i）第一栅电极或第二栅电极之间，和（ii）第一底部的 第一沟 还描述了形成和使用电子设备的过程。

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