发明授权
- 专利标题： Charged-particle beam lithography with grid matching for correction of beam shot position deviation
- 专利标题（中）： 带电粒子束光刻与网格匹配校正射束位置偏差
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申请号： US11754598申请日： 2007-05-29
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公开(公告)号： US07652271B2公开(公告)日： 2010-01-26
- 发明人: Seiji Wake , Hitoshi Sunaoshi
- 申请人： Seiji Wake , Hitoshi Sunaoshi
- 申请人地址： JP Numazu-shi
- 专利权人： NuFlare Technology, Inc.
- 当前专利权人： NuFlare Technology, Inc.
- 当前专利权人地址： JP Numazu-shi
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2006-149571 20060530
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; H01J37/304
摘要：
A charged-particle beam pattern writing apparatus includes an electric field intensity calculator unit which operates to calculate an electric field intensity of another region different from a specified region of a workpiece due to electrical charge to be electrified by irradiation of a charged particle beam to the specified region, a correction amount calculator unit which calculates based on the electric field intensity a correction amount for correcting an irradiation position upon irradiation of the charged particle beam to the above-noted another region, and a pattern writing unit which irradiates based on the correction amount the charged particle beam to the another region to thereby write or “draw” a pattern therein.
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