公开(公告)号：US20080067441A1

公开(公告)日：2008-03-20

申请号：US11754598

申请日：2007-05-29

申请人： Seiji WAKE ,  Hitoshi Sunaoshi

发明人： Seiji WAKE ,  Hitoshi Sunaoshi

IPC分类号： H01J37/08

CPC分类号： H01J37/304 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/244 ,  H01J37/3005 ,  H01J37/3023 ,  H01J37/3174 ,  H01J2237/24564 ,  H01J2237/30461

摘要： A charged-particle beam pattern writing apparatus includes an electric field intensity calculator unit which operates to calculate an electric field intensity of another region different from a specified region of a workpiece due to electrical charge to be electrified by irradiation of a charged particle beam to the specified region, a correction amount calculator unit which calculates based on the electric field intensity a correction amount for correcting an irradiation position upon irradiation of the charged particle beam to the above-noted another region, and a pattern writing unit which irradiates based on the correction amount the charged particle beam to the another region to thereby write or “draw” a pattern therein.

摘要翻译： 带电粒子束图案写入装置包括电场强度计算器单元，该电场强度计算单元用于计算由于带电粒子束的照射引起的带电电荷而与工件的指定区域不同的另一区域的电场强度 校正量计算器单元，其基于电场强度计算用于在将带电粒子束照射到上述另一区域时照射照射位置的校正量，以及基于校正照射的图案写入单元， 将带电粒子束量化到另一区域，从而在其中写入或“绘制”图案。

公开(公告)号：US06617592B2

公开(公告)日：2003-09-09

申请号：US09810478

申请日：2001-03-19

申请人： Jun Takamatsu ,  Kiyoshi Hattori ,  Hitoshi Sunaoshi ,  Naoharu Shimomura ,  Kiminobu Akeno ,  Munehiro Ogasawara

发明人： Jun Takamatsu ,  Kiyoshi Hattori ,  Hitoshi Sunaoshi ,  Naoharu Shimomura ,  Kiminobu Akeno ,  Munehiro Ogasawara

IPC分类号： A61N500

CPC分类号： H01J37/304 ,  H01J2237/20292 ,  H01J2237/3175

摘要： A charged particle beam system includes a chamber having an opening in a ceiling, a table placed immediately below the opening and movable in one direction, a laser interferometer set in the chamber, including a laser oscillator placed along the moving direction of the table, a movable mirror placed on the table side opposing the oscillator, a beam splitter placed to cross the laser beam and a fixed mirror fixed, immediately above the beam splitter, on the ceiling of the chamber, an optical lens barrel having an opening communicating with the opening of the chamber, and a beam gun set on a ceiling of the optical lens barrel to irradiate a specimen placed on the table with a charged particle beam through the first and second openings. At least an upper wall portion from the opening to the fixed mirror of the chamber is made of an invar alloy.

摘要翻译： 带电粒子束系统包括：在天花板上具有开口的腔室，放置在开口正下方并可在一个方向上移动的工作台;设置在腔室中的激光干涉仪，包括沿着工作台移动方向放置的激光振荡器， 放置在与振荡器相对的台面侧的可移动反射镜，放置成穿过激光束的分束器和在分束器正上方固定的固定镜，位于腔室的天花板上，光学透镜镜筒具有与开口连通的开口 以及设置在光学镜筒的天花板上的射束，以通过第一和第二开口照射放置在桌子上的带有带电粒子束的样本。 至少从腔室的开口到固定反射镜的上壁部分由凹入合金制成。

公开(公告)号：US08367276B2

公开(公告)日：2013-02-05

申请号：US12209694

申请日：2008-09-12

申请人： Yasushi Okubo ,  Masahiro Hashimoto ,  Toshiyuki Suzuki ,  Takayuki Ohnishi ,  Hirohito Anze ,  Hitoshi Sunaoshi ,  Takashi Kamikubo

发明人： Yasushi Okubo ,  Masahiro Hashimoto ,  Toshiyuki Suzuki ,  Takayuki Ohnishi ,  Hirohito Anze ,  Hitoshi Sunaoshi ,  Takashi Kamikubo

IPC分类号： G03F1/00 ,  G03F7/00

CPC分类号： G03F1/80 ,  G03F1/54 ,  G03F1/78

摘要： A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen.

摘要翻译： 在具有主要含有铬的材料的遮光膜的透明基板上形成掩模坯料，并且通过使用电子束写入抗蚀剂通过光刻将遮光膜形成为转印图案而用于获得光掩模。 掩模坯料包括形成在遮光膜上的掩模层，用于在蚀刻中用作蚀刻掩模，其将遮光膜形成为转印图案。 掩模层由含硅的材料制成。 掩模坯料还包括形成在掩模层上并且至少含有铬和氮的氮化铬基膜。

公开(公告)号：US08188443B2

公开(公告)日：2012-05-29

申请号：US12043707

申请日：2008-03-06

申请人： Kenji Ohtoshi ,  Hitoshi Sunaoshi ,  Osamu Iizuka ,  Takahito Nakayama

发明人： Kenji Ohtoshi ,  Hitoshi Sunaoshi ,  Osamu Iizuka ,  Takahito Nakayama

IPC分类号： H01J3/14

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/21 ,  H01J37/304 ,  H01J2237/1532 ,  H01J2237/216

摘要： A focusing method of a charged particle beam includes measuring a first set value to focus a beam on a position of a reference plane by using a lens coil, acquiring a first factor to change a set value of an electrostatic lens depending on a distance and a second factor to change a set value of the coil depending on a distance, measuring a level distribution of a target plane, correcting the first set value by using the second factor to correct a focal point position of the beam in the coil from the position of the reference plane to an intermediate level position of the level distribution of the target plane, and correcting a second set value of the lens depending on a level position of the target plane by using the first factor to correct a focal point position of the beam by the lens.

摘要翻译： 带电粒子束的聚焦方法包括测量第一设定值以通过使用透镜线圈将光束聚焦在参考平面的位置上，获取根据距离改变静电透镜的设定值的第一因素，以及 根据距离来改变线圈的设定值的第二因素，测量目标平面的电平分布，通过使用第二因素校正第一设定值，以从线圈的位置校正线圈中的焦点位置 所述基准平面与所述目标平面的水平分布的中间位置相对应，并且通过使用所述第一因子来校正所述目标平面的水平位置的所述透镜的第二设定值，以通过所述第一因子校正所述光束的焦点位置 镜头。

公开(公告)号：US07923704B2

公开(公告)日：2011-04-12

申请号：US12137146

申请日：2008-06-11

申请人： Hitoshi Sunaoshi

发明人： Hitoshi Sunaoshi

IPC分类号： G21K5/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/185 ,  H01J37/304 ,  H01J2237/30455

摘要： A charged particle beam writing method includes writing a pattern on a first target object by using a charged particle beam in a writing apparatus; and conveying a second target object after having written the pattern on the first target object, wherein even though the second target object is arranged on any one of conveying paths including a carry-out port and a carry-in port of the writing apparatus, a conveying operation for the second target object is not performed during writing the pattern on the first target object.

摘要翻译： 带电粒子束写入方法包括通过在书写装置中使用带电粒子束将图案写在第一目标物体上; 以及在将所述图案写入所述第一目标物体之后传送第二目标物体，其中即使所述第二目标物体布置在包括所述书写装置的进出口和进入端口的传送路径中的任何一个上， 在将图案写入第一目标对象时不执行用于第二目标对象的传送操作。

公开(公告)号：US20090075185A1

公开(公告)日：2009-03-19

申请号：US12209694

申请日：2008-09-12

申请人： Yasushi OKUBO ,  Masahiro Hashimoto ,  Toshiyuki Suzuki ,  Takayuki Ohnishi ,  Hirohito Anze ,  Hitoshi Sunaoshi ,  Takashi Kamikubo

发明人： Yasushi OKUBO ,  Masahiro Hashimoto ,  Toshiyuki Suzuki ,  Takayuki Ohnishi ,  Hirohito Anze ,  Hitoshi Sunaoshi ,  Takashi Kamikubo

IPC分类号： G03F1/00

CPC分类号： G03F1/80 ,  G03F1/54 ,  G03F1/78

摘要： A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen.

摘要翻译： 在具有主要含有铬的材料的遮光膜的透明基板上形成掩模坯料，并且通过使用电子束写入抗蚀剂通过光刻将遮光膜形成为转印图案而用于获得光掩模。 掩模坯料包括形成在遮光膜上的掩模层，用于在蚀刻中用作蚀刻掩模，其将遮光膜形成为转印图案。 掩模层由含硅的材料制成。 掩模坯料还包括形成在掩模层上并且至少含有铬和氮的氮化铬基膜。

公开(公告)号：US07679068B2

公开(公告)日：2010-03-16

申请号：US11617165

申请日：2006-12-28

申请人： Takashi Kamikubo ,  Shuichi Tamamushi ,  Hitoshi Sunaoshi ,  Kenji Ohtoshi ,  Rieko Nishimura

发明人： Takashi Kamikubo ,  Shuichi Tamamushi ,  Hitoshi Sunaoshi ,  Kenji Ohtoshi ,  Rieko Nishimura

IPC分类号： G21K5/10 ,  G01D5/00

CPC分类号： G01K1/08 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31776

摘要： A method of obtaining a deflection aberration correcting voltage. The method includes writing predetermined patterns at a plurality of focus height positions such that a dose is used as a variable. Dimensional variations of width sizes of the predetermined patterns written at the plurality of focus height positions such that the dose is used as the variable are measured. Further, effective resolutions of the written predetermined patterns are calculated by using the dimensional variations. The method further includes, on the basis of a focus height position at which a minimum effective resolution of the predetermined patterns is obtained, calculating a correcting voltage to correct deflection aberration and outputting the correcting voltage. The correcting voltage is used when a charged particle beam is deflected.

摘要翻译： 一种获得偏转像差校正电压的方法。 该方法包括在多个焦点高度位置处写入预定图案，使得剂量被用作变量。 测量在多个焦点高度位置处写入的预定图案的宽度尺寸的尺寸变化，使得剂量用作变量。 此外，通过使用尺寸变化来计算书写的预定图案的有效分辨率。 该方法还包括：基于获得预定图案的最小有效分辨率的焦点高度位置，计算校正电压以校正偏转像差并输出校正电压。 当带电粒子束偏转时使用校正电压。

公开(公告)号：US07652271B2

公开(公告)日：2010-01-26

申请号：US11754598

申请日：2007-05-29

申请人： Seiji Wake ,  Hitoshi Sunaoshi

发明人： Seiji Wake ,  Hitoshi Sunaoshi

IPC分类号： H01L21/027 ,  H01J37/304

CPC分类号： H01J37/304 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/244 ,  H01J37/3005 ,  H01J37/3023 ,  H01J37/3174 ,  H01J2237/24564 ,  H01J2237/30461

摘要： A charged-particle beam pattern writing apparatus includes an electric field intensity calculator unit which operates to calculate an electric field intensity of another region different from a specified region of a workpiece due to electrical charge to be electrified by irradiation of a charged particle beam to the specified region, a correction amount calculator unit which calculates based on the electric field intensity a correction amount for correcting an irradiation position upon irradiation of the charged particle beam to the above-noted another region, and a pattern writing unit which irradiates based on the correction amount the charged particle beam to the another region to thereby write or “draw” a pattern therein.

摘要翻译： 带电粒子束图案写入装置包括电场强度计算器单元，该电场强度计算单元用于计算由于带电粒子束的照射引起的带电电荷而与工件的指定区域不同的另一区域的电场强度 校正量计算器单元，其基于电场强度计算用于在将带电粒子束照射到上述另一区域时照射照射位置的校正量，以及基于校正照射的图案写入单元， 将带电粒子束量化到另一区域，从而在其中写入或“绘制”图案。

公开(公告)号：US20070023703A1

公开(公告)日：2007-02-01

申请号：US11478744

申请日：2006-07-03

申请人： Hitoshi Sunaoshi ,  Shuichi Tamamushi

发明人： Hitoshi Sunaoshi ,  Shuichi Tamamushi

IPC分类号： G21K5/10

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31776

摘要： A writing apparatus including a selector unit responsive to receipt of input data of a pattern to be written by shots of irradiation of an electron beam, configured to select a current density of the electron beam being shot and a maximal shot size thereof based on the input data of the pattern to be written; and a writing unit configured to create an electron beam with the current density selected by said selector unit, shape the created electron beam into a shot size less than or equal to said maximal shot size in units of the shots, and shoot the shaped electron beam onto a workpiece to thereby write said pattern.

摘要翻译： 一种写入装置，包括：选择器单元，响应于接收到要被写入的图形的输入数据的电子束的照射，被配置为基于所述输入来选择正在被拍摄的电子束的电流密度和最大镜头大小 要写入的模式的数据; 以及写入单元，其被配置为产生具有由所述选择器单元选择的电流密度的电子束，将所创建的电子束形成为以所述拍摄为单位小于或等于所述最大投射尺寸的投射尺寸，并且拍摄成形电子束 到工件上，从而写入所述图案。

公开(公告)号：US06836319B2

公开(公告)日：2004-12-28

申请号：US10819201

申请日：2004-04-07

申请人： Munehiro Ogasawara ,  Jun Takamatsu ,  Hitoshi Sunaoshi ,  Naoharu Shimomura

发明人： Munehiro Ogasawara ,  Jun Takamatsu ,  Hitoshi Sunaoshi ,  Naoharu Shimomura

IPC分类号： G01J100

CPC分类号： H01J37/304 ,  H01J2237/30433 ,  H01J2237/3175

摘要： A method for adjusting an optical system of an energy beam apparatus by using a mark signal that is obtained by one-dimensionally or two-dimensionally scanning a mark on a sample with an energy beam. The mark has a one-dimensional or two-dimensional periodic structure. A first mark signal is detected by scanning the mark with a beam. The mark is set on the optical axis of the optical system. A second mark signal is detected by scanning the mark with a beam. The mark is located at a position that is deviated from the optical axis. A deviation of a deflection position is determined based on a phase difference between the first and second mark signals.

摘要翻译： 一种能量束装置的光学系统的调整方法，该方法是利用能量束对样品上的标记进行二维或二维扫描而得到的标记信号。 标记具有一维或二维周期性结构。 通过用光束扫描标记来检测第一标记信号。 标记设置在光学系统的光轴上。 通过用光束扫描标记来检测第二标记信号。 标记位于偏离光轴的位置。 基于第一和第二标记信号之间的相位差来确定偏转位置的偏差。