Invention Grant
- Patent Title: Semiconductor device including main substrate and sub substrates
- Patent Title (中): 半导体器件包括主衬底和副衬底
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Application No.: US12136117Application Date: 2008-06-10
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Publication No.: US07652358B2Publication Date: 2010-01-26
- Inventor: Atsushi Minakawa , Mamoru Sekiya , Norio Umezu
- Applicant: Atsushi Minakawa , Mamoru Sekiya , Norio Umezu
- Applicant Address: JP Neyagawa
- Assignee: Onkyo Corporation
- Current Assignee: Onkyo Corporation
- Current Assignee Address: JP Neyagawa
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Priority: JP2007-295203 20071114
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
A semiconductor device according to a preferred embodiment of the present invention is a semiconductor device including a main substrate and one or more sub substrates, and the semiconductor device includes first heat generating devices mounted on the sub substrates, sub-substrate heatsinks mounted to the first heat generating devices, and a main-substrate heatsink mounted to the main substrate, wherein the sub-substrate heatsinks and the main-substrate heatsink are secured to each other, such that there is a predetermined positional relationship between the sub substrates and the main substrate.
Public/Granted literature
- US20090121342A1 SEMICONDUCTOR DEVICE INCLUDING MAIN SUBSTRATE AND SUB SUBSTRATES AND FABRICATION METHOD OF THE SAME Public/Granted day:2009-05-14
Information query
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