A cathode substrate (10) and gate substrate (30) are arranged such that at least gate ribs (12) abut against cathode ribs (34) and gate electrodes (35) and, depending on the case, the cathode ribs (34) abut against cathodes (13). The gate ribs (12) and cathode ribs (34) can be formed to heights of about 5 μm to 300 μm. The gate ribs (12) can be surface-polished so their heights are uniform. The distance between the cathode electrodes (13) and gate electrodes (35) can accordingly be made uniform and short, so driving at a low voltage and an increase in luminance uniformity can be realized.