发明授权
- 专利标题： Memory including two access devices per phase change element
- 专利标题（中）： 每个相变元件包含两个存取设备的存储器
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申请号： US11651157申请日： 2007-01-09
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公开(公告)号： US07652914B2公开(公告)日： 2010-01-26
- 发明人: Thomas Nirschl , Roger Cheek , Mark Lamorey , Ming-Hsiu Lee
- 申请人： Thomas Nirschl , Roger Cheek , Mark Lamorey , Ming-Hsiu Lee
- 申请人地址： US NC Cary US NY Armonk TW Hsin Chu
- 专利权人： Qimonda North America Corp.,International Business Machines Corporation,Macronix International Co., Ltd.
- 当前专利权人： Qimonda North America Corp.,International Business Machines Corporation,Macronix International Co., Ltd.
- 当前专利权人地址： US NC Cary US NY Armonk TW Hsin Chu
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A memory includes a bit line and a phase change element. A first side of the phase change element is coupled to the bit line. The memory includes a first access device coupled to a second side of the phase change element and a second access device coupled to the second side of the phase change element. The memory includes a circuit for precharging the bit line and one of selecting only the first access device to program the phase change element to a first state and selecting both the first access device and the second access device to program the phase change element to a second state.
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